Electrical contacts to carbon nanotubes down to 1 nm in diameter

Woong Kim, Ali Javey, Ryan Tu, Jien Cao, Qian Wang, Hongjie Dai

Research output: Contribution to journalArticle

209 Citations (Scopus)

Abstract

Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

Original languageEnglish
Article number173101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number17
DOIs
Publication statusPublished - 2005 Oct 24
Externally publishedYes

Fingerprint

electric contacts
carbon nanotubes
rhodium
palladium
tunnels
field effect transistors
reactivity
perturbation
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, W., Javey, A., Tu, R., Cao, J., Wang, Q., & Dai, H. (2005). Electrical contacts to carbon nanotubes down to 1 nm in diameter. Applied Physics Letters, 87(17), 1-3. [173101]. https://doi.org/10.1063/1.2108127

Electrical contacts to carbon nanotubes down to 1 nm in diameter. / Kim, Woong; Javey, Ali; Tu, Ryan; Cao, Jien; Wang, Qian; Dai, Hongjie.

In: Applied Physics Letters, Vol. 87, No. 17, 173101, 24.10.2005, p. 1-3.

Research output: Contribution to journalArticle

Kim, W, Javey, A, Tu, R, Cao, J, Wang, Q & Dai, H 2005, 'Electrical contacts to carbon nanotubes down to 1 nm in diameter', Applied Physics Letters, vol. 87, no. 17, 173101, pp. 1-3. https://doi.org/10.1063/1.2108127
Kim, Woong ; Javey, Ali ; Tu, Ryan ; Cao, Jien ; Wang, Qian ; Dai, Hongjie. / Electrical contacts to carbon nanotubes down to 1 nm in diameter. In: Applied Physics Letters. 2005 ; Vol. 87, No. 17. pp. 1-3.
@article{a5bb6945b84340f2951b25fdf37f9848,
title = "Electrical contacts to carbon nanotubes down to 1 nm in diameter",
abstract = "Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.",
author = "Woong Kim and Ali Javey and Ryan Tu and Jien Cao and Qian Wang and Hongjie Dai",
year = "2005",
month = "10",
day = "24",
doi = "10.1063/1.2108127",
language = "English",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Electrical contacts to carbon nanotubes down to 1 nm in diameter

AU - Kim, Woong

AU - Javey, Ali

AU - Tu, Ryan

AU - Cao, Jien

AU - Wang, Qian

AU - Dai, Hongjie

PY - 2005/10/24

Y1 - 2005/10/24

N2 - Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

AB - Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

UR - http://www.scopus.com/inward/record.url?scp=28344446515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344446515&partnerID=8YFLogxK

U2 - 10.1063/1.2108127

DO - 10.1063/1.2108127

M3 - Article

AN - SCOPUS:28344446515

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 173101

ER -