Electrical contacts to carbon nanotubes down to 1 nm in diameter

Woong Kim, Ali Javey, Ryan Tu, Jien Cao, Qian Wang, Hongjie Dai

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210 Citations (Scopus)

Abstract

Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

Original languageEnglish
Article number173101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number17
DOIs
Publication statusPublished - 2005 Oct 24
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Kim, W., Javey, A., Tu, R., Cao, J., Wang, Q., & Dai, H. (2005). Electrical contacts to carbon nanotubes down to 1 nm in diameter. Applied Physics Letters, 87(17), 1-3. [173101]. https://doi.org/10.1063/1.2108127