Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer

Tae Young Lee, Hyun Cheol Koo, Hyung Jun Kim, Suk Hee Han, Joonyeon Chang

Research output: Contribution to journalArticle

Abstract

The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 mΩ, is observed and the spin Hall angle is found to be ∼0.01. The dominant mechanism is believed to side-jump scattering.

Original languageEnglish
Article number2278175
JournalIEEE Transactions on Magnetics
Volume50
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

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Spin Hall effect
Semiconductor quantum wells
Magnetization
Multilayers
Electrodes
Scattering
Magnetic fields
Electrons
indium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer. / Lee, Tae Young; Koo, Hyun Cheol; Kim, Hyung Jun; Han, Suk Hee; Chang, Joonyeon.

In: IEEE Transactions on Magnetics, Vol. 50, No. 1, 2278175, 01.01.2014.

Research output: Contribution to journalArticle

Lee, Tae Young ; Koo, Hyun Cheol ; Kim, Hyung Jun ; Han, Suk Hee ; Chang, Joonyeon. / Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer. In: IEEE Transactions on Magnetics. 2014 ; Vol. 50, No. 1.
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