Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching

A. Y. Polyakov, Han Su Cho, Jin Hyeon Yun, In-Hwan Lee, E. B. Yakimov, N. B. Smirnov, K. D. Shcherbachev

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH4 )2 S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.

Original languageEnglish
Pages (from-to)Q165-Q170
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number6
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

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Dry etching
Semiconductor quantum wells
Structural properties
Diodes
Bending (forming)
Aluminum Oxide
Sapphire
Leakage currents
Light emitting diodes
Etching
Annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching. / Polyakov, A. Y.; Cho, Han Su; Yun, Jin Hyeon; Lee, In-Hwan; Yakimov, E. B.; Smirnov, N. B.; Shcherbachev, K. D.

In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 6, 01.01.2016, p. Q165-Q170.

Research output: Contribution to journalArticle

Polyakov, A. Y. ; Cho, Han Su ; Yun, Jin Hyeon ; Lee, In-Hwan ; Yakimov, E. B. ; Smirnov, N. B. ; Shcherbachev, K. D. / Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching. In: ECS Journal of Solid State Science and Technology. 2016 ; Vol. 5, No. 6. pp. Q165-Q170.
@article{e04689fbe2374b92bd3cb7af81163227,
title = "Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching",
abstract = "GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH4 )2 S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.",
author = "Polyakov, {A. Y.} and Cho, {Han Su} and Yun, {Jin Hyeon} and In-Hwan Lee and Yakimov, {E. B.} and Smirnov, {N. B.} and Shcherbachev, {K. D.}",
year = "2016",
month = "1",
day = "1",
doi = "10.1149/2.0171606jss",
language = "English",
volume = "5",
pages = "Q165--Q170",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "6",

}

TY - JOUR

T1 - Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching

AU - Polyakov, A. Y.

AU - Cho, Han Su

AU - Yun, Jin Hyeon

AU - Lee, In-Hwan

AU - Yakimov, E. B.

AU - Smirnov, N. B.

AU - Shcherbachev, K. D.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH4 )2 S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.

AB - GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH4 )2 S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.

UR - http://www.scopus.com/inward/record.url?scp=84976579879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84976579879&partnerID=8YFLogxK

U2 - 10.1149/2.0171606jss

DO - 10.1149/2.0171606jss

M3 - Article

AN - SCOPUS:84976579879

VL - 5

SP - Q165-Q170

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 6

ER -