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Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy
A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, A. S. Usikov, H. Helava, K. D. Shcherbachev, A. V. Govorkov, Yu N. Makarov, In-Hwan Lee
Research output: Contribution to journal › Article › peer-review
11
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(Scopus)