Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter

B. G. Choi, I. H. Kim, D. H. Kim, K. S. Lee, T. S. Lee, B. Cheong, Y. J. Baik, W. M. Kim

Research output: Contribution to journalArticle

99 Citations (Scopus)

Abstract

Al and F-doped ZnO films of 200 nm thicknesses were prepared on glass substrates by co-sputtering ZnO targets composed of 2 wt.% Al2 O3, 1.3 wt.% ZnF and pure ZnO targets, respectively. After annealing in vacuum pressure of 10-6 Torr at 300 °C for 2 h, the resistivity of ZnO films decreased down to 4.75 × 10-4 Ω cm and ZnO film which composed of Al-doped ZnO 25% and F-doped ZnO 75% by volume fraction showed the highest mobility of 42.2 cm2/V s. From XRD measurements it was found that F dopants improved crystallization of ZnO films. Form XPS spectra of oxygen 1 s binding energy and Hall measurements it was confirmed that by vacuum annealing chemisorbed oxygens at the grain boundary desorbed and reduced grain boundary scattering. Also figure of merit (FOM) defined as ratio of electrical conductivity to optical absorption coefficient increased up to 2.67 Ω-1 after post annealing.

Original languageEnglish
Pages (from-to)2161-2165
Number of pages5
JournalJournal of the European Ceramic Society
Volume25
Issue number12 SPEC. ISS.
DOIs
Publication statusPublished - 2005

Keywords

  • Electrical properties
  • Transparent and conducting oxide
  • ZnO

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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