Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors

Ho Kyun Jang, Jun Eon Jin, Jun Hee Choi, Pil Soo Kang, Do Hyun Kim, Gyu-Tae Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 μm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 μm were 6.8, 9.0, and 9.9 tube μm-2, respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.

Original languageEnglish
Pages (from-to)6874-6880
Number of pages7
JournalPhysical Chemistry Chemical Physics
Volume17
Issue number10
DOIs
Publication statusPublished - 2015 Mar 14

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Carbon Nanotubes
Single-walled carbon nanotubes (SWCN)
Field effect transistors
field effect transistors
carbon nanotubes
thresholds
Electrodes
SPICE
Purification
Monte Carlo methods
Electronic equipment
Monte Carlo Method
electrodes
purification
Monte Carlo method

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Physics and Astronomy(all)

Cite this

Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors. / Jang, Ho Kyun; Jin, Jun Eon; Choi, Jun Hee; Kang, Pil Soo; Kim, Do Hyun; Kim, Gyu-Tae.

In: Physical Chemistry Chemical Physics, Vol. 17, No. 10, 14.03.2015, p. 6874-6880.

Research output: Contribution to journalArticle

Jang, Ho Kyun ; Jin, Jun Eon ; Choi, Jun Hee ; Kang, Pil Soo ; Kim, Do Hyun ; Kim, Gyu-Tae. / Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors. In: Physical Chemistry Chemical Physics. 2015 ; Vol. 17, No. 10. pp. 6874-6880.
@article{e95c2cc3417f4fef9c7d619e2ba179a8,
title = "Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors",
abstract = "With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 μm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 μm were 6.8, 9.0, and 9.9 tube μm-2, respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.",
author = "Jang, {Ho Kyun} and Jin, {Jun Eon} and Choi, {Jun Hee} and Kang, {Pil Soo} and Kim, {Do Hyun} and Gyu-Tae Kim",
year = "2015",
month = "3",
day = "14",
doi = "10.1039/c4cp05964f",
language = "English",
volume = "17",
pages = "6874--6880",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "10",

}

TY - JOUR

T1 - Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors

AU - Jang, Ho Kyun

AU - Jin, Jun Eon

AU - Choi, Jun Hee

AU - Kang, Pil Soo

AU - Kim, Do Hyun

AU - Kim, Gyu-Tae

PY - 2015/3/14

Y1 - 2015/3/14

N2 - With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 μm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 μm were 6.8, 9.0, and 9.9 tube μm-2, respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.

AB - With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 μm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 μm were 6.8, 9.0, and 9.9 tube μm-2, respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.

UR - http://www.scopus.com/inward/record.url?scp=84923884014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923884014&partnerID=8YFLogxK

U2 - 10.1039/c4cp05964f

DO - 10.1039/c4cp05964f

M3 - Article

AN - SCOPUS:84923884014

VL - 17

SP - 6874

EP - 6880

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 10

ER -