Abstract
With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 μm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 μm were 6.8, 9.0, and 9.9 tube μm-2, respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.
| Original language | English |
|---|---|
| Pages (from-to) | 6874-6880 |
| Number of pages | 7 |
| Journal | Physical Chemistry Chemical Physics |
| Volume | 17 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2015 Mar 14 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Physics and Astronomy(all)
Cite this
Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors. / Jang, Ho Kyun; Jin, Jun Eon; Choi, Jun Hee; Kang, Pil Soo; Kim, Do Hyun; Kim, Gyu-Tae.
In: Physical Chemistry Chemical Physics, Vol. 17, No. 10, 14.03.2015, p. 6874-6880.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors
AU - Jang, Ho Kyun
AU - Jin, Jun Eon
AU - Choi, Jun Hee
AU - Kang, Pil Soo
AU - Kim, Do Hyun
AU - Kim, Gyu-Tae
PY - 2015/3/14
Y1 - 2015/3/14
N2 - With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 μm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 μm were 6.8, 9.0, and 9.9 tube μm-2, respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.
AB - With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 μm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 μm were 6.8, 9.0, and 9.9 tube μm-2, respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.
UR - http://www.scopus.com/inward/record.url?scp=84923884014&partnerID=8YFLogxK
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U2 - 10.1039/c4cp05964f
DO - 10.1039/c4cp05964f
M3 - Article
AN - SCOPUS:84923884014
VL - 17
SP - 6874
EP - 6880
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
SN - 1463-9076
IS - 10
ER -