Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB

Sang Won Yoon; Jong Hyun Seo; Kyou Hyun Kim; Jae Pyoung Ahn; Tae Yeon Seong; Kon Bae Lee; Hoon Kwon

doi:10.1016/j.tsf.2009.01.168

Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB

Sang Won Yoon, Jong Hyun Seo, Kyou Hyun Kim, Jae Pyoung Ahn, Tae Yeon Seong, Kon Bae Lee, Hoon Kwon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The devices using individual ZnO nanowire have been manufactured by FIB. Its specific resistance and microstructural characterization has been investigated using nano manipulator and transmission electron microscopy (TEM) observations. The specific resistance was 0.2-0.4 Ω cm. With increasing the RTA temperature, the specific resistance began to be decreased and was abruptly decreased at the RTA temperature above 500 °C. The Pt junction of as-manufactured device consisted of the Pt nanoparticles of 5 nm and the amorphous carbon of 9.1 wt.%. After RTA, the size of Pt nanoparticles grew up to 100 nm, the contents of carbon were decreased within the Pt junction, and the conductivity was enhanced due to Au diffusion into the Pt junction. It was strongly suggested that the contents of carbon is the most important factor for the electrical enhancement.

Original language	English
Pages (from-to)	4003-4006
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.168
Publication status	Published - 2009 May 29

Keywords

Conductivity
Electrical resistance
FIB
Pt deposition
Single nanowire sensor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB",

abstract = "The devices using individual ZnO nanowire have been manufactured by FIB. Its specific resistance and microstructural characterization has been investigated using nano manipulator and transmission electron microscopy (TEM) observations. The specific resistance was 0.2-0.4 Ω cm. With increasing the RTA temperature, the specific resistance began to be decreased and was abruptly decreased at the RTA temperature above 500 °C. The Pt junction of as-manufactured device consisted of the Pt nanoparticles of 5 nm and the amorphous carbon of 9.1 wt.%. After RTA, the size of Pt nanoparticles grew up to 100 nm, the contents of carbon were decreased within the Pt junction, and the conductivity was enhanced due to Au diffusion into the Pt junction. It was strongly suggested that the contents of carbon is the most important factor for the electrical enhancement.",

keywords = "Conductivity, Electrical resistance, FIB, Pt deposition, Single nanowire sensor",

author = "Yoon, {Sang Won} and Seo, {Jong Hyun} and Kim, {Kyou Hyun} and Ahn, {Jae Pyoung} and Seong, {Tae Yeon} and Lee, {Kon Bae} and Hoon Kwon",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R11-2005-048-00000-0). Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

month = may,

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doi = "10.1016/j.tsf.2009.01.168",

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AU - Yoon, Sang Won

AU - Seo, Jong Hyun

AU - Kim, Kyou Hyun

AU - Ahn, Jae Pyoung

AU - Seong, Tae Yeon

AU - Lee, Kon Bae

AU - Kwon, Hoon

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R11-2005-048-00000-0). Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/5/29

Y1 - 2009/5/29

N2 - The devices using individual ZnO nanowire have been manufactured by FIB. Its specific resistance and microstructural characterization has been investigated using nano manipulator and transmission electron microscopy (TEM) observations. The specific resistance was 0.2-0.4 Ω cm. With increasing the RTA temperature, the specific resistance began to be decreased and was abruptly decreased at the RTA temperature above 500 °C. The Pt junction of as-manufactured device consisted of the Pt nanoparticles of 5 nm and the amorphous carbon of 9.1 wt.%. After RTA, the size of Pt nanoparticles grew up to 100 nm, the contents of carbon were decreased within the Pt junction, and the conductivity was enhanced due to Au diffusion into the Pt junction. It was strongly suggested that the contents of carbon is the most important factor for the electrical enhancement.

AB - The devices using individual ZnO nanowire have been manufactured by FIB. Its specific resistance and microstructural characterization has been investigated using nano manipulator and transmission electron microscopy (TEM) observations. The specific resistance was 0.2-0.4 Ω cm. With increasing the RTA temperature, the specific resistance began to be decreased and was abruptly decreased at the RTA temperature above 500 °C. The Pt junction of as-manufactured device consisted of the Pt nanoparticles of 5 nm and the amorphous carbon of 9.1 wt.%. After RTA, the size of Pt nanoparticles grew up to 100 nm, the contents of carbon were decreased within the Pt junction, and the conductivity was enhanced due to Au diffusion into the Pt junction. It was strongly suggested that the contents of carbon is the most important factor for the electrical enhancement.

KW - Conductivity

KW - Electrical resistance

KW - FIB

KW - Pt deposition

KW - Single nanowire sensor

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Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB

Abstract

Keywords

ASJC Scopus subject areas

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