Abstract
The devices using individual ZnO nanowire have been manufactured by FIB. Its specific resistance and microstructural characterization has been investigated using nano manipulator and transmission electron microscopy (TEM) observations. The specific resistance was 0.2-0.4 Ω cm. With increasing the RTA temperature, the specific resistance began to be decreased and was abruptly decreased at the RTA temperature above 500 °C. The Pt junction of as-manufactured device consisted of the Pt nanoparticles of 5 nm and the amorphous carbon of 9.1 wt.%. After RTA, the size of Pt nanoparticles grew up to 100 nm, the contents of carbon were decreased within the Pt junction, and the conductivity was enhanced due to Au diffusion into the Pt junction. It was strongly suggested that the contents of carbon is the most important factor for the electrical enhancement.
| Original language | English |
|---|---|
| Pages (from-to) | 4003-4006 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 517 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2009 May 29 |
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Keywords
- Conductivity
- Electrical resistance
- FIB
- Pt deposition
- Single nanowire sensor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB. / Yoon, Sang Won; Seo, Jong Hyun; Kim, Kyou Hyun; Ahn, Jae Pyoung; Seong, Tae Yeon; Lee, Kon Bae; Kwon, Hoon.
In: Thin Solid Films, Vol. 517, No. 14, 29.05.2009, p. 4003-4006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB
AU - Yoon, Sang Won
AU - Seo, Jong Hyun
AU - Kim, Kyou Hyun
AU - Ahn, Jae Pyoung
AU - Seong, Tae Yeon
AU - Lee, Kon Bae
AU - Kwon, Hoon
PY - 2009/5/29
Y1 - 2009/5/29
N2 - The devices using individual ZnO nanowire have been manufactured by FIB. Its specific resistance and microstructural characterization has been investigated using nano manipulator and transmission electron microscopy (TEM) observations. The specific resistance was 0.2-0.4 Ω cm. With increasing the RTA temperature, the specific resistance began to be decreased and was abruptly decreased at the RTA temperature above 500 °C. The Pt junction of as-manufactured device consisted of the Pt nanoparticles of 5 nm and the amorphous carbon of 9.1 wt.%. After RTA, the size of Pt nanoparticles grew up to 100 nm, the contents of carbon were decreased within the Pt junction, and the conductivity was enhanced due to Au diffusion into the Pt junction. It was strongly suggested that the contents of carbon is the most important factor for the electrical enhancement.
AB - The devices using individual ZnO nanowire have been manufactured by FIB. Its specific resistance and microstructural characterization has been investigated using nano manipulator and transmission electron microscopy (TEM) observations. The specific resistance was 0.2-0.4 Ω cm. With increasing the RTA temperature, the specific resistance began to be decreased and was abruptly decreased at the RTA temperature above 500 °C. The Pt junction of as-manufactured device consisted of the Pt nanoparticles of 5 nm and the amorphous carbon of 9.1 wt.%. After RTA, the size of Pt nanoparticles grew up to 100 nm, the contents of carbon were decreased within the Pt junction, and the conductivity was enhanced due to Au diffusion into the Pt junction. It was strongly suggested that the contents of carbon is the most important factor for the electrical enhancement.
KW - Conductivity
KW - Electrical resistance
KW - FIB
KW - Pt deposition
KW - Single nanowire sensor
UR - http://www.scopus.com/inward/record.url?scp=65149100007&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65149100007&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2009.01.168
DO - 10.1016/j.tsf.2009.01.168
M3 - Article
AN - SCOPUS:65149100007
VL - 517
SP - 4003
EP - 4006
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 14
ER -