Electrical properties and radiation detector performance of free-standing bulk n-GaN

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, V. M. Zaletin, I. M. Gazizov, N. G. Kolin, S. J. Pearton

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (1013-1014cm-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼1016cm-3 and mobility ∼1000 cm2/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 1015cm-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 15cm-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.

Original languageEnglish
Article number021205
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number2
DOIs
Publication statusPublished - 2012 Jan 1
Externally publishedYes

Fingerprint

Hole traps
Radiation detectors
radiation detectors
Vapor phase epitaxy
Electric properties
electrical properties
Hydrides
traps
vapor phase epitaxy
detectors
hydrides
Activation energy
electrical resistivity
Electron traps
activation energy
Spectrometry
low concentrations
Detectors
electrons
trapping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Electrical properties and radiation detector performance of free-standing bulk n-GaN. / Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Zaletin, V. M.; Gazizov, I. M.; Kolin, N. G.; Pearton, S. J.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 30, No. 2, 021205, 01.01.2012.

Research output: Contribution to journalArticle

Lee, I-H, Polyakov, AY, Smirnov, NB, Govorkov, AV, Kozhukhova, EA, Zaletin, VM, Gazizov, IM, Kolin, NG & Pearton, SJ 2012, 'Electrical properties and radiation detector performance of free-standing bulk n-GaN', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 30, no. 2, 021205. https://doi.org/10.1116/1.3690644
Lee, In-Hwan ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Zaletin, V. M. ; Gazizov, I. M. ; Kolin, N. G. ; Pearton, S. J. / Electrical properties and radiation detector performance of free-standing bulk n-GaN. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2012 ; Vol. 30, No. 2.
@article{05f2008bcb744f81b6e84daee0f130e5,
title = "Electrical properties and radiation detector performance of free-standing bulk n-GaN",
abstract = "Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (1013-1014cm-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼1016cm-3 and mobility ∼1000 cm2/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 1015cm-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 15cm-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.",
author = "In-Hwan Lee and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Zaletin, {V. M.} and Gazizov, {I. M.} and Kolin, {N. G.} and Pearton, {S. J.}",
year = "2012",
month = "1",
day = "1",
doi = "10.1116/1.3690644",
language = "English",
volume = "30",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Electrical properties and radiation detector performance of free-standing bulk n-GaN

AU - Lee, In-Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Zaletin, V. M.

AU - Gazizov, I. M.

AU - Kolin, N. G.

AU - Pearton, S. J.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (1013-1014cm-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼1016cm-3 and mobility ∼1000 cm2/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 1015cm-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 15cm-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.

AB - Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (1013-1014cm-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼1016cm-3 and mobility ∼1000 cm2/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 1015cm-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 15cm-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.

UR - http://www.scopus.com/inward/record.url?scp=84861605145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861605145&partnerID=8YFLogxK

U2 - 10.1116/1.3690644

DO - 10.1116/1.3690644

M3 - Article

VL - 30

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 2

M1 - 021205

ER -