Electrical properties and X-ray spectrum of semi-insulating CdZnTe:Pb crystals

J. H. Won, Kihyun Kim, S. H. Cho, J. H. Suh, J. K. Hong, S. U. Kim

Research output: Contribution to journalArticle

Abstract

High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 1019 cm- 3. The resistivity of Pb-doped CdZnTe single crystal was 2 × 109 Ω cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log (ρ) versus 1000 / T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and 241Am spectrum measurements.

Original languageEnglish
Pages (from-to)211-214
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume586
Issue number2
DOIs
Publication statusPublished - 2008 Feb 21

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Electric properties
electrical properties
Doping (additives)
Single crystals
X rays
Crystals
Crystal growth from melt
doped crystals
Vacancies
crystals
x rays
electrical resistivity
Bridgman method
single crystals
purity
plots
slopes
conductivity
Temperature
temperature dependence

Keywords

  • CdZnTe:Pb
  • X-ray detector
  • X-ray spectrum

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Electrical properties and X-ray spectrum of semi-insulating CdZnTe:Pb crystals. / Won, J. H.; Kim, Kihyun; Cho, S. H.; Suh, J. H.; Hong, J. K.; Kim, S. U.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 586, No. 2, 21.02.2008, p. 211-214.

Research output: Contribution to journalArticle

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AB - High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 1019 cm- 3. The resistivity of Pb-doped CdZnTe single crystal was 2 × 109 Ω cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log (ρ) versus 1000 / T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and 241Am spectrum measurements.

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