Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander V. Markov, Cheul Ro Lee, In Hwan Lee, Nikolai G. Kolin, Denis I. Merkurisov, Vladimir M. Boiko, James S. Wright

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Pages375-377
Number of pages3
Publication statusPublished - 2006 Dec 1
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume955
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/12/1

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Lee, C. R., Lee, I. H., Kolin, N. G., Merkurisov, D. I., Boiko, V. M., & Wright, J. S. (2006). Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 375-377). (Materials Research Society Symposium Proceedings; Vol. 955).