Electrical Properties of a 0.95(Na 0.5 K 0.5) NbO 3-0.05 CaTiO 3 Thin Film Grown on a Pt / Ti / SiO 2/ Si Substrate

Youn Seon Lee, In Tae Seo, Bo Yun Kim, Sahn Nahm, Chong-Yun Kang, Young Hun Jeong, Jong Hoo Paik

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An amorphous phase was formed in a 0.95(Na0.5K0.5)NbO3-0.05CaTiO3 (NKN-CT) film grown at 300°C, and a low-temperature transient Ca2Nb2O7 phase was formed in the film grown at 500°C. In films grown at high temperatures (≥600°C), secondary phases such as K5.75Nb10.85O30 and K4Ti10Nb2O27 were developed without the formation of a NKN-CT phase, probably because of Na2O evaporation. The same secondary phases were formed in the film grown at 300°C and subsequently annealed at 850°C under an air atmosphere. However, a homogeneous NKN-CT phase was formed in films grown at 300°C and subsequently annealed at 830°C-880°C under the K2O and Na2O atmospheres. Moreover, the film annealed at 830°C in particular exhibited good electric and piezoelectric properties, including a high dielectric constant of 747 with a low dissipation factor of 0.93% at 100 kHz, low leakage current density of 2.0 × 10-7 A/cm2 at 0.1 MV/cm, and high Pr and d33 values of 15.4 μC/cm2 and 124 pm/V at 100 kV/cm, respectively.

Original languageEnglish
Pages (from-to)2892-2896
Number of pages5
JournalJournal of the American Ceramic Society
Volume97
Issue number9
DOIs
Publication statusPublished - 2014 Sep 1

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electrical property
Electric properties
substrate
Thin films
Substrates
atmosphere
density current
Leakage currents
leakage
dissipation
Evaporation
Permittivity
Current density
evaporation
Temperature
air
Air

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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Electrical Properties of a 0.95(Na 0.5 K 0.5) NbO 3-0.05 CaTiO 3 Thin Film Grown on a Pt / Ti / SiO 2/ Si Substrate. / Lee, Youn Seon; Seo, In Tae; Kim, Bo Yun; Nahm, Sahn; Kang, Chong-Yun; Jeong, Young Hun; Paik, Jong Hoo.

In: Journal of the American Ceramic Society, Vol. 97, No. 9, 01.09.2014, p. 2892-2896.

Research output: Contribution to journalArticle

Lee, Youn Seon ; Seo, In Tae ; Kim, Bo Yun ; Nahm, Sahn ; Kang, Chong-Yun ; Jeong, Young Hun ; Paik, Jong Hoo. / Electrical Properties of a 0.95(Na 0.5 K 0.5) NbO 3-0.05 CaTiO 3 Thin Film Grown on a Pt / Ti / SiO 2/ Si Substrate. In: Journal of the American Ceramic Society. 2014 ; Vol. 97, No. 9. pp. 2892-2896.
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abstract = "An amorphous phase was formed in a 0.95(Na0.5K0.5)NbO3-0.05CaTiO3 (NKN-CT) film grown at 300°C, and a low-temperature transient Ca2Nb2O7 phase was formed in the film grown at 500°C. In films grown at high temperatures (≥600°C), secondary phases such as K5.75Nb10.85O30 and K4Ti10Nb2O27 were developed without the formation of a NKN-CT phase, probably because of Na2O evaporation. The same secondary phases were formed in the film grown at 300°C and subsequently annealed at 850°C under an air atmosphere. However, a homogeneous NKN-CT phase was formed in films grown at 300°C and subsequently annealed at 830°C-880°C under the K2O and Na2O atmospheres. Moreover, the film annealed at 830°C in particular exhibited good electric and piezoelectric properties, including a high dielectric constant of 747 with a low dissipation factor of 0.93{\%} at 100 kHz, low leakage current density of 2.0 × 10-7 A/cm2 at 0.1 MV/cm, and high Pr and d33 values of 15.4 μC/cm2 and 124 pm/V at 100 kV/cm, respectively.",
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T1 - Electrical Properties of a 0.95(Na 0.5 K 0.5) NbO 3-0.05 CaTiO 3 Thin Film Grown on a Pt / Ti / SiO 2/ Si Substrate

AU - Lee, Youn Seon

AU - Seo, In Tae

AU - Kim, Bo Yun

AU - Nahm, Sahn

AU - Kang, Chong-Yun

AU - Jeong, Young Hun

AU - Paik, Jong Hoo

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AB - An amorphous phase was formed in a 0.95(Na0.5K0.5)NbO3-0.05CaTiO3 (NKN-CT) film grown at 300°C, and a low-temperature transient Ca2Nb2O7 phase was formed in the film grown at 500°C. In films grown at high temperatures (≥600°C), secondary phases such as K5.75Nb10.85O30 and K4Ti10Nb2O27 were developed without the formation of a NKN-CT phase, probably because of Na2O evaporation. The same secondary phases were formed in the film grown at 300°C and subsequently annealed at 850°C under an air atmosphere. However, a homogeneous NKN-CT phase was formed in films grown at 300°C and subsequently annealed at 830°C-880°C under the K2O and Na2O atmospheres. Moreover, the film annealed at 830°C in particular exhibited good electric and piezoelectric properties, including a high dielectric constant of 747 with a low dissipation factor of 0.93% at 100 kHz, low leakage current density of 2.0 × 10-7 A/cm2 at 0.1 MV/cm, and high Pr and d33 values of 15.4 μC/cm2 and 124 pm/V at 100 kV/cm, respectively.

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