Electrical properties of amorphous BaTi4 O9 films grown on Cu / Ti / SiO2/ Si substrates using RF magnetron sputtering

Jin Seong Kim, Min Gyu Kang, Sang Hyo Kweon, Guifang Han, Chong Yun Kang, Jung Rak Yun, Young Hun Jeong, Jong Hoo Paik, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Amorphous BaTi4O9 (BT4) films for use as capacitors embedded in PCB substrates were grown on Cu electrodes at low temperatures (≤ 200°C). The dielectric constant (k) of the amorphous BT4 film grown at room temperature (RT) was 38, and its dissipation factor was 3.2% at 100 kHz. A similar k value was obtained at radio-frequency ranges, with a quality factor of 143 at 1.0 GHz. The films showed a capacitance density of 200 nF/cm 2, a temperature coefficient of capacitance of 296 ppm/°C at 75 kHz, and a breakdown voltage of 42.5 V. This film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for 2016 for capacitors grown on organic substrates. In addition, the leakage current mechanism of the amorphous BT4 films was found to be Schottky emission, and the Schottky barrier height was calculated as 2.26 eV.

Original languageEnglish
Pages (from-to)1248-1252
Number of pages5
JournalJournal of the American Ceramic Society
Issue number4
Publication statusPublished - 2013 Apr

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


Dive into the research topics of 'Electrical properties of amorphous BaTi<sub>4</sub> O<sub>9</sub> films grown on Cu / Ti / SiO<sub>2</sub>/ Si substrates using RF magnetron sputtering'. Together they form a unique fingerprint.

Cite this