Electrical properties of amorphous Bi5Nb3 O15 thin film for RF MIM capacitors

Kyung Hoon Cho, Chang Hak Choi, Kyoung Pyo Hong, Joo Young Choi, Young Hun Jeong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Hwack Joo Lee

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Amorphous Bi5Nb3O15B5 N3 film grown at 300°C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/μ2 and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm2 at 1 V. The quadratic and linear voltage coefficient of capacitances of the B5N3 film were 438 ppm/V2 and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/°C at 100 kHz. These results confirmed the potential of the amorphous B5 N3 film as a good candidate material for a high-performance metal-insulator-metal capacitors.

Original languageEnglish
Pages (from-to)684-687
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

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Keywords

  • BiNbO
  • High-k
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TTC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Cho, K. H., Choi, C. H., Hong, K. P., Choi, J. Y., Jeong, Y. H., Nahm, S., Kang, C. Y., Yoon, S. J., & Lee, H. J. (2008). Electrical properties of amorphous Bi5Nb3 O15 thin film for RF MIM capacitors. IEEE Electron Device Letters, 29(7), 684-687. https://doi.org/10.1109/LED.2008.2000911