Electrical properties of Bi2Ti2O7 thin films grown at low temperature by the pulsed laser deposition

Lee Seung Kang; Jin Seong Kim; Jong Woo Sun; Sang Hyo Kweon; Myung Eun Song; Dong Soo Paik; Tae Hyun Sung; Sahn Nahm

doi:10.1149/1.3564877

Electrical properties of Bi₂Ti₂O₇ thin films grown at low temperature by the pulsed laser deposition

Lee Seung Kang, Jin Seong Kim, Jong Woo Sun, Sang Hyo Kweon, Myung Eun Song, Dong Soo Paik, Tae Hyun Sung, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

A crystalline Bi₂Ti₂O₇ (B ₂T₂) film with a high dielectric constant (ε_r) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi₄Ti ₃O₁₂ target was used. The Mn-doping improved the electrical properties of the B₂T₂ films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B₂T₂ film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10^-7A/cm² at 0.5 MV/cm² and a large ε_r (∼73) with a low tan δ(∼1.3%).

Original language	English
Pages (from-to)	G38-G41
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1149/1.3564877
Publication status	Published - 2011

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Kang, L. S., Kim, J. S., Sun, J. W., Kweon, S. H., Song, M. E., Paik, D. S., Sung, T. H., & Nahm, S. (2011). Electrical properties of Bi₂Ti₂O₇ thin films grown at low temperature by the pulsed laser deposition. Electrochemical and Solid-State Letters, 14(6), G38-G41. https://doi.org/10.1149/1.3564877

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title = "Electrical properties of Bi2Ti2O7 thin films grown at low temperature by the pulsed laser deposition",

abstract = "A crystalline Bi2Ti2O7 (B 2T2) film with a high dielectric constant (εr) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi4Ti 3O12 target was used. The Mn-doping improved the electrical properties of the B2T2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B2T2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10-7A/cm2 at 0.5 MV/cm2 and a large εr (∼73) with a low tan δ(∼1.3%).",

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AU - Kang, Lee Seung

AU - Kim, Jin Seong

AU - Sun, Jong Woo

AU - Kweon, Sang Hyo

AU - Song, Myung Eun

AU - Paik, Dong Soo

AU - Sung, Tae Hyun

AU - Nahm, Sahn

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AB - A crystalline Bi2Ti2O7 (B 2T2) film with a high dielectric constant (εr) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi4Ti 3O12 target was used. The Mn-doping improved the electrical properties of the B2T2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B2T2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10-7A/cm2 at 0.5 MV/cm2 and a large εr (∼73) with a low tan δ(∼1.3%).

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