Electrical properties of Bi2Ti2O7 thin films grown at low temperature by the pulsed laser deposition

Lee Seung Kang, Jin Seong Kim, Jong Woo Sun, Sang Hyo Kweon, Myung Eun Song, Dong Soo Paik, Tae Hyun Sung, Sahn Nahm

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A crystalline Bi2Ti2O7 (B 2T2) film with a high dielectric constant (εr) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi4Ti 3O12 target was used. The Mn-doping improved the electrical properties of the B2T2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B2T2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10-7A/cm2 at 0.5 MV/cm2 and a large εr (∼73) with a low tan δ(∼1.3%).

Original languageEnglish
Pages (from-to)G38-G41
JournalElectrochemical and Solid-State Letters
Volume14
Issue number6
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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