Electrical properties of Bi2Ti2O7 thin films grown at low temperature by the pulsed laser deposition

Lee Seung Kang; Jin Seong Kim; Jong Woo Sun; Sang Hyo Kweon; Myung Eun Song; Dong Soo Paik; Tae Hyun Sung; Sahn Nahm

doi:10.1149/1.3564877

Electrical properties of Bi₂Ti₂O₇ thin films grown at low temperature by the pulsed laser deposition

Lee Seung Kang, Jin Seong Kim, Jong Woo Sun, Sang Hyo Kweon, Myung Eun Song, Dong Soo Paik, Tae Hyun Sung, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A crystalline Bi₂Ti₂O₇ (B ₂T₂) film with a high dielectric constant (ε_r) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi₄Ti ₃O₁₂ target was used. The Mn-doping improved the electrical properties of the B₂T₂ films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B₂T₂ film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10^-7A/cm² at 0.5 MV/cm² and a large ε_r (∼73) with a low tan δ(∼1.3%).

Original language	English
Pages (from-to)	G38-G41
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1149/1.3564877
Publication status	Published - 2011

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.3564877

Fingerprint Dive into the research topics of 'Electrical properties of Bi2Ti2O7 thin films grown at low temperature by the pulsed laser deposition'. Together they form a unique fingerprint.

Cite this

Electrical properties of Bi₂Ti₂O₇ thin films grown at low temperature by the pulsed laser deposition. / Kang, Lee Seung; Kim, Jin Seong; Sun, Jong Woo; Kweon, Sang Hyo; Song, Myung Eun; Paik, Dong Soo; Sung, Tae Hyun; Nahm, Sahn.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 6, 2011, p. G38-G41.

Research output: Contribution to journal › Article › peer-review

@article{10b39079aaf84b3dbb5f7fdcc66f9bd7,

title = "Electrical properties of Bi2Ti2O7 thin films grown at low temperature by the pulsed laser deposition",

abstract = "A crystalline Bi2Ti2O7 (B 2T2) film with a high dielectric constant (εr) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi4Ti 3O12 target was used. The Mn-doping improved the electrical properties of the B2T2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B2T2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10-7A/cm2 at 0.5 MV/cm2 and a large εr (∼73) with a low tan δ(∼1.3%).",

author = "Kang, {Lee Seung} and Kim, {Jin Seong} and Sun, {Jong Woo} and Kweon, {Sang Hyo} and Song, {Myung Eun} and Paik, {Dong Soo} and Sung, {Tae Hyun} and Sahn Nahm",

year = "2011",

doi = "10.1149/1.3564877",

language = "English",

volume = "14",

pages = "G38--G41",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - Electrical properties of Bi2Ti2O7 thin films grown at low temperature by the pulsed laser deposition

AU - Kang, Lee Seung

AU - Kim, Jin Seong

AU - Sun, Jong Woo

AU - Kweon, Sang Hyo

AU - Song, Myung Eun

AU - Paik, Dong Soo

AU - Sung, Tae Hyun

AU - Nahm, Sahn

PY - 2011

Y1 - 2011

N2 - A crystalline Bi2Ti2O7 (B 2T2) film with a high dielectric constant (εr) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi4Ti 3O12 target was used. The Mn-doping improved the electrical properties of the B2T2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B2T2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10-7A/cm2 at 0.5 MV/cm2 and a large εr (∼73) with a low tan δ(∼1.3%).

AB - A crystalline Bi2Ti2O7 (B 2T2) film with a high dielectric constant (εr) of 67.2 was formed even at 300°C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi4Ti 3O12 target was used. The Mn-doping improved the electrical properties of the B2T2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B2T2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 × 10-7A/cm2 at 0.5 MV/cm2 and a large εr (∼73) with a low tan δ(∼1.3%).

UR - http://www.scopus.com/inward/record.url?scp=79953780892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953780892&partnerID=8YFLogxK

U2 - 10.1149/1.3564877

DO - 10.1149/1.3564877

M3 - Article

AN - SCOPUS:79953780892

VL - 14

SP - G38-G41

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 6

ER -