Electrical properties of Bi5Nb3O15 thin film grown on TiN/SiO2/Si at room temperature for metal - Insulator - Metal capacitors

Kyung Hoon Cho, Tae Geun Seong, Joo Young Choi, Jin Seong Kim, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300 °C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/μm2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/ SiO2/Si substrate is a good candidate material for high-performance metal - insulator - metal capacitors.

Original languageEnglish
Pages (from-to)614-616
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2009


  • BiNbO
  • High-k
  • Metal - insulator - metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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