Electrical properties of Bi5Nb3O15 thin film grown on TiN/SiO2/Si at room temperature for metal - Insulator - Metal capacitors

Kyung Hoon Cho; Tae Geun Seong; Joo Young Choi; Jin Seong Kim; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Jong Hee Kim

doi:10.1109/LED.2009.2020441

Electrical properties of Bi₅Nb₃O₁₅ thin film grown on TiN/SiO₂/Si at room temperature for metal - Insulator - Metal capacitors

Kyung Hoon Cho, Tae Geun Seong, Joo Young Choi, Jin Seong Kim, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Buckling was observed in Bi₅Nb₃O₁₅ (BiNbO) films grown on TiN/SiO₂/Si at 300 °C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/μm² and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm² at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V² and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/ SiO₂/Si substrate is a good candidate material for high-performance metal - insulator - metal capacitors.

Original language	English
Pages (from-to)	614-616
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/LED.2009.2020441
Publication status	Published - 2009

Keywords

BiNbO
High-k
Metal - insulator - metal (MIM) capacitor
Temperature coefficient of capacitance (TCC)
Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2020441

Cite this

@article{df0c72d62cce4be6bd882a0a4c2d8f45,

title = "Electrical properties of Bi5Nb3O15 thin film grown on TiN/SiO2/Si at room temperature for metal - Insulator - Metal capacitors",

abstract = "Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300 °C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/μm2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/ SiO2/Si substrate is a good candidate material for high-performance metal - insulator - metal capacitors.",

keywords = "BiNbO, High-k, Metal - insulator - metal (MIM) capacitor, Temperature coefficient of capacitance (TCC), Voltage coefficient of capacitance (VCC)",

author = "Cho, {Kyung Hoon} and Seong, {Tae Geun} and Choi, {Joo Young} and Kim, {Jin Seong} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Jong Hee}",

note = "Funding Information: Manuscript received March 3, 2009. Current version published May 27, 2009. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea. The review of this letter was arranged by Editor T. Wang. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

doi = "10.1109/LED.2009.2020441",

language = "English",

volume = "30",

pages = "614--616",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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T1 - Electrical properties of Bi5Nb3O15 thin film grown on TiN/SiO2/Si at room temperature for metal - Insulator - Metal capacitors

AU - Cho, Kyung Hoon

AU - Seong, Tae Geun

AU - Choi, Joo Young

AU - Kim, Jin Seong

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

N1 - Funding Information: Manuscript received March 3, 2009. Current version published May 27, 2009. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea. The review of this letter was arranged by Editor T. Wang. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009

Y1 - 2009

N2 - Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300 °C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/μm2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/ SiO2/Si substrate is a good candidate material for high-performance metal - insulator - metal capacitors.

AB - Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300 °C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/μm2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/ SiO2/Si substrate is a good candidate material for high-performance metal - insulator - metal capacitors.

KW - BiNbO

KW - High-k

KW - Metal - insulator - metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TCC)

KW - Voltage coefficient of capacitance (VCC)

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