Electrical properties of CIGS/Mo junctions as a function of MoSe 2 orientation and Na doping

Ju Heon Yoon, Jun Ho Kim, Won Mok Kim, Jong Keuk Park, Young Joon Baik, Tae Yeon Seong, Jeung Hyun Jeong

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The electrical properties of Cu(In,Ga)Se2/Mo junctions were characterized with respect of MoSe2 orientation and Na doping level using an inverse transmission line method, in which the Cu(In,Ga)Se2 (CIGS)/Mo contact resistance could be measured separately from the CIGS film sheet resistance. The MoSe2 orientation was controlled by varying the Mo surface density, with the c-axis parallel and normal orientations favored on Mo surfaces of lower and higher density, respectively. The effect of Na doping was compared by using samples with and without a SiOx film on sodalime glass. The conversion of the MoSe2 orientation from c-axis normal to parallel produced a twofold reduction in CIGS/Mo contact resistance. Measurements of the contact resistances as a function of temperature showed that the difference in CIGS/Mo contact resistance between the samples with different MoSe2 orientations was due to different barrier heights at the back contact. Comparison between Na-doped and Na-reduced samples revealed that the contact resistance for the Na-reduced system was four times of that of the doped sample, which showed more pronounced Schottky-junction behavior at lower temperature, indicating that Na doping effectively reduced the barrier height at the back contact.

Original languageEnglish
Pages (from-to)90-96
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Volume22
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Contact resistance
contact resistance
Electric properties
electrical properties
Doping (additives)
Sheet resistance
transmission lines
Electric lines
Glass
Temperature
glass
temperature

Keywords

  • CIGS thin-film solar cells
  • CIGS/Mo contact resistance
  • inverse transmission line method
  • MoSe orientation
  • Na doping

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical properties of CIGS/Mo junctions as a function of MoSe 2 orientation and Na doping. / Yoon, Ju Heon; Kim, Jun Ho; Kim, Won Mok; Park, Jong Keuk; Baik, Young Joon; Seong, Tae Yeon; Jeong, Jeung Hyun.

In: Progress in Photovoltaics: Research and Applications, Vol. 22, No. 1, 01.01.2014, p. 90-96.

Research output: Contribution to journalArticle

Yoon, Ju Heon ; Kim, Jun Ho ; Kim, Won Mok ; Park, Jong Keuk ; Baik, Young Joon ; Seong, Tae Yeon ; Jeong, Jeung Hyun. / Electrical properties of CIGS/Mo junctions as a function of MoSe 2 orientation and Na doping. In: Progress in Photovoltaics: Research and Applications. 2014 ; Vol. 22, No. 1. pp. 90-96.
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