Abstract
The electrical properties of Cr-SrTiO 3 films deposited on p-Si(1 0 0) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO 3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (2 0 0) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO 3 film.
| Original language | English |
|---|---|
| Pages (from-to) | 321-324 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 98 |
| DOIs | |
| Publication status | Published - 2012 Oct |
Keywords
- C-V
- CTF
- I-V
- NVMs
- ReCTF
- ReRAM
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Cite this
Seo, Y., Song, M., An, H. M., Kim, H. D., Kim, T. G., Sung, Y. M., & Kim, Y. S. (2012). Electrical properties of Cr-doped SrTiO 3 films as a switch material in ReCTF devices. Microelectronic Engineering, 98, 321-324. https://doi.org/10.1016/j.mee.2012.07.082