Electrical properties of Cr-doped SrTiO 3 films as a switch material in ReCTF devices

Yujeong Seo, Minyeong Song, Ho Myoung An, Hee Dong Kim, Tae Geun Kim, Yun Mo Sung, Yeon Soo Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electrical properties of Cr-SrTiO 3 films deposited on p-Si(1 0 0) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO 3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (2 0 0) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO 3 film.

Original languageEnglish
Pages (from-to)321-324
Number of pages4
JournalMicroelectronic Engineering
Volume98
DOIs
Publication statusPublished - 2012 Oct 1

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Keywords

  • C-V
  • CTF
  • I-V
  • NVMs
  • ReCTF
  • ReRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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