Electrical properties of Cr-doped SrTiO 3 films as a switch material in ReCTF devices

Yujeong Seo; Minyeong Song; Ho Myoung An; Hee Dong Kim; Tae Geun Kim; Yun Mo Sung; Yeon Soo Kim

doi:10.1016/j.mee.2012.07.082

Electrical properties of Cr-doped SrTiO ₃ films as a switch material in ReCTF devices

Yujeong Seo, Minyeong Song, Ho Myoung An, Hee Dong Kim, Tae Geun Kim, Yun Mo Sung, Yeon Soo Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The electrical properties of Cr-SrTiO ₃ films deposited on p-Si(1 0 0) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO ₃ film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (2 0 0) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO ₃ film.

Original language	English
Pages (from-to)	321-324
Number of pages	4
Journal	Microelectronic Engineering
Volume	98
DOIs	https://doi.org/10.1016/j.mee.2012.07.082
Publication status	Published - 2012 Oct

Keywords

C-V
CTF
I-V
NVMs
ReCTF
ReRAM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2012.07.082

Cite this

@article{01ab23f4f8c947eb996379a1f8e9b1d4,

title = "Electrical properties of Cr-doped SrTiO 3 films as a switch material in ReCTF devices",

abstract = "The electrical properties of Cr-SrTiO 3 films deposited on p-Si(1 0 0) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO 3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (2 0 0) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO 3 film.",

keywords = "C-V, CTF, I-V, NVMs, ReCTF, ReRAM",

author = "Yujeong Seo and Minyeong Song and An, {Ho Myoung} and Kim, {Hee Dong} and Kim, {Tae Geun} and Sung, {Yun Mo} and Kim, {Yeon Soo}",

note = "Funding Information: This work was supported by the Seoul R&BD program (No. ST100024) as well as the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No. 2010-00218 ). This work was also partially supported by the Samsung Semiconductor Research Center at Korea University .",

year = "2012",

month = oct,

doi = "10.1016/j.mee.2012.07.082",

language = "English",

volume = "98",

pages = "321--324",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

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T1 - Electrical properties of Cr-doped SrTiO 3 films as a switch material in ReCTF devices

AU - Seo, Yujeong

AU - Song, Minyeong

AU - An, Ho Myoung

AU - Kim, Hee Dong

AU - Kim, Tae Geun

AU - Sung, Yun Mo

AU - Kim, Yeon Soo

N1 - Funding Information: This work was supported by the Seoul R&BD program (No. ST100024) as well as the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No. 2010-00218 ). This work was also partially supported by the Samsung Semiconductor Research Center at Korea University .

PY - 2012/10

Y1 - 2012/10

N2 - The electrical properties of Cr-SrTiO 3 films deposited on p-Si(1 0 0) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO 3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (2 0 0) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO 3 film.

AB - The electrical properties of Cr-SrTiO 3 films deposited on p-Si(1 0 0) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO 3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (2 0 0) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO 3 film.

KW - C-V

KW - CTF

KW - I-V

KW - NVMs

KW - ReCTF

KW - ReRAM

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U2 - 10.1016/j.mee.2012.07.082

DO - 10.1016/j.mee.2012.07.082

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VL - 98

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EP - 324

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

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