Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Alexander Polyakov, Nikolay Smirnov, Sergey Tarelkin, Anatoliy Govorkov, Vitaly Bormashov, Mikhail Kuznetsov, Dmitry Teteruk, Sergey Buga, Nikolay Kornilov, In-Hwan Lee

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Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-10 14 cm -3 . The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.

Original languageEnglish
Pages (from-to)S159-S164
JournalMaterials Today: Proceedings
Publication statusPublished - 2016 Jan 1
Externally publishedYes


  • Deep trap
  • Diamond film
  • Fermi level pinning
  • Photoconductivity
  • Schottky barrier diode

ASJC Scopus subject areas

  • Materials Science(all)

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    Polyakov, A., Smirnov, N., Tarelkin, S., Govorkov, A., Bormashov, V., Kuznetsov, M., Teteruk, D., Buga, S., Kornilov, N., & Lee, I-H. (2016). Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes. Materials Today: Proceedings, 3, S159-S164. https://doi.org/10.1016/j.matpr.2016.02.027