Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Alexander Polyakov, Nikolay Smirnov, Sergey Tarelkin, Anatoliy Govorkov, Vitaly Bormashov, Mikhail Kuznetsov, Dmitry Teteruk, Sergey Buga, Nikolay Kornilov, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-1014 cm-3. The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.

Original languageEnglish
Pages (from-to)S159-S164
JournalMaterials Today: Proceedings
Volume3
DOIs
Publication statusPublished - 2016
Externally publishedYes

Keywords

  • Deep trap
  • Diamond film
  • Fermi level pinning
  • Photoconductivity
  • Schottky barrier diode

ASJC Scopus subject areas

  • Materials Science(all)

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