Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Alexander Polyakov, Nikolay Smirnov, Sergey Tarelkin, Anatoliy Govorkov, Vitaly Bormashov, Mikhail Kuznetsov, Dmitry Teteruk, Sergey Buga, Nikolay Kornilov, In-Hwan Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-10 14 cm -3 . The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.

Original languageEnglish
Pages (from-to)S159-S164
JournalMaterials Today: Proceedings
Volume3
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

Fingerprint

Schottky barrier diodes
Diamond
Platinum
Diamonds
Electric properties
Oxygen
Boron
Photocurrents
Chemical vapor deposition
Defects
Electric potential
Substrates
Temperature

Keywords

  • Deep trap
  • Diamond film
  • Fermi level pinning
  • Photoconductivity
  • Schottky barrier diode

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Polyakov, A., Smirnov, N., Tarelkin, S., Govorkov, A., Bormashov, V., Kuznetsov, M., ... Lee, I-H. (2016). Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes. Materials Today: Proceedings, 3, S159-S164. https://doi.org/10.1016/j.matpr.2016.02.027

Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes. / Polyakov, Alexander; Smirnov, Nikolay; Tarelkin, Sergey; Govorkov, Anatoliy; Bormashov, Vitaly; Kuznetsov, Mikhail; Teteruk, Dmitry; Buga, Sergey; Kornilov, Nikolay; Lee, In-Hwan.

In: Materials Today: Proceedings, Vol. 3, 01.01.2016, p. S159-S164.

Research output: Contribution to journalArticle

Polyakov, A, Smirnov, N, Tarelkin, S, Govorkov, A, Bormashov, V, Kuznetsov, M, Teteruk, D, Buga, S, Kornilov, N & Lee, I-H 2016, 'Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes', Materials Today: Proceedings, vol. 3, pp. S159-S164. https://doi.org/10.1016/j.matpr.2016.02.027
Polyakov A, Smirnov N, Tarelkin S, Govorkov A, Bormashov V, Kuznetsov M et al. Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes. Materials Today: Proceedings. 2016 Jan 1;3:S159-S164. https://doi.org/10.1016/j.matpr.2016.02.027
Polyakov, Alexander ; Smirnov, Nikolay ; Tarelkin, Sergey ; Govorkov, Anatoliy ; Bormashov, Vitaly ; Kuznetsov, Mikhail ; Teteruk, Dmitry ; Buga, Sergey ; Kornilov, Nikolay ; Lee, In-Hwan. / Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes. In: Materials Today: Proceedings. 2016 ; Vol. 3. pp. S159-S164.
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