Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Bum Ho Choi, Suk Koo Jung, Suk Il Kim, Sung Woo Hwang, Jung Ho Park, Yong Kim, Eun Kyu Kim, Suk Ki Min

Research output: Contribution to journalArticle

Abstract

Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

Original languageEnglish
Pages (from-to)6996-6997
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number12 B
Publication statusPublished - 1998 Dec 1

Keywords

  • Carbon
  • Coulomb staircases
  • Current-voltage
  • Electron-beam
  • Nano-devices
  • Single electron tunneling

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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