Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Bum Ho Choi, Suk Koo Jung, Suk Il Kim, Sung Woo Hwang, Jung ho Park, Yong Kim, Eun Kyu Kim, Suk Ki Min

Research output: Contribution to journalArticle

Abstract

Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

Original languageEnglish
Pages (from-to)6996-6997
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number12 B
Publication statusPublished - 1998 Dec 1

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Electron beams
contamination
Electric properties
Contamination
electrical properties
Silica
electron beams
silicon dioxide
stairways
Current voltage characteristics
Irradiation
aluminum
Aluminum
irradiation
Carbon
carbon
electric potential
room temperature
Temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices. / Choi, Bum Ho; Jung, Suk Koo; Kim, Suk Il; Hwang, Sung Woo; Park, Jung ho; Kim, Yong; Kim, Eun Kyu; Min, Suk Ki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 12 B, 01.12.1998, p. 6996-6997.

Research output: Contribution to journalArticle

Choi, Bum Ho ; Jung, Suk Koo ; Kim, Suk Il ; Hwang, Sung Woo ; Park, Jung ho ; Kim, Yong ; Kim, Eun Kyu ; Min, Suk Ki. / Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1998 ; Vol. 37, No. 12 B. pp. 6996-6997.
@article{f12f53fe88ef4db8a124f468e57efafd,
title = "Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices",
abstract = "Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.",
keywords = "Carbon, Coulomb staircases, Current-voltage, Electron-beam, Nano-devices, Single electron tunneling",
author = "Choi, {Bum Ho} and Jung, {Suk Koo} and Kim, {Suk Il} and Hwang, {Sung Woo} and Park, {Jung ho} and Yong Kim and Kim, {Eun Kyu} and Min, {Suk Ki}",
year = "1998",
month = "12",
day = "1",
language = "English",
volume = "37",
pages = "6996--6997",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12 B",

}

TY - JOUR

T1 - Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

AU - Choi, Bum Ho

AU - Jung, Suk Koo

AU - Kim, Suk Il

AU - Hwang, Sung Woo

AU - Park, Jung ho

AU - Kim, Yong

AU - Kim, Eun Kyu

AU - Min, Suk Ki

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

AB - Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

KW - Carbon

KW - Coulomb staircases

KW - Current-voltage

KW - Electron-beam

KW - Nano-devices

KW - Single electron tunneling

UR - http://www.scopus.com/inward/record.url?scp=19644391422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19644391422&partnerID=8YFLogxK

M3 - Article

VL - 37

SP - 6996

EP - 6997

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 B

ER -