Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments

Ji Hyun Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, B. Tolmachevsky, A. V. Osinsky, P. E. Norris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of UV/O 3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N 2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O 3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages653-658
Number of pages6
Volume693
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

Other

OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA
Period01/11/2601/11/30

Fingerprint

Light emitting diodes
Heterojunctions
Diodes
Electric properties
Plasmas
Annealing
Deuterium
Electric space charge
Leakage currents
Air
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, J. H., Luo, B., Mehandru, R., Ren, F., Lee, K. P., Pearton, S. J., ... Norris, P. E. (2002). Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments. In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 653-658)

Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments. / Kim, Ji Hyun; Luo, B.; Mehandru, R.; Ren, F.; Lee, K. P.; Pearton, S. J.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Tolmachevsky, B.; Osinsky, A. V.; Norris, P. E.

Materials Research Society Symposium - Proceedings. ed. / J.E. Northrup; J. Neugebauer; D.C. Look; S.F. Chichibu; H. Riechert. Vol. 693 2002. p. 653-658.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, JH, Luo, B, Mehandru, R, Ren, F, Lee, KP, Pearton, SJ, Polyakov, AY, Smirnov, NB, Govorkov, AV, Tolmachevsky, B, Osinsky, AV & Norris, PE 2002, Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments. in JE Northrup, J Neugebauer, DC Look, SF Chichibu & H Riechert (eds), Materials Research Society Symposium - Proceedings. vol. 693, pp. 653-658, GaN and Related Alloys-2001, Boston, MA, United States, 01/11/26.
Kim JH, Luo B, Mehandru R, Ren F, Lee KP, Pearton SJ et al. Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments. In Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H, editors, Materials Research Society Symposium - Proceedings. Vol. 693. 2002. p. 653-658
Kim, Ji Hyun ; Luo, B. ; Mehandru, R. ; Ren, F. ; Lee, K. P. ; Pearton, S. J. ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Tolmachevsky, B. ; Osinsky, A. V. ; Norris, P. E. / Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments. Materials Research Society Symposium - Proceedings. editor / J.E. Northrup ; J. Neugebauer ; D.C. Look ; S.F. Chichibu ; H. Riechert. Vol. 693 2002. pp. 653-658
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abstract = "Effects of UV/O 3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N 2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O 3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.",
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AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Tolmachevsky, B.

AU - Osinsky, A. V.

AU - Norris, P. E.

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AB - Effects of UV/O 3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N 2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O 3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

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