Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments

J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, B. Tolmachevsky, A. V. Osinsky, P. E. Norris

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