Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments

J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, B. Tolmachevsky, A. V. Osinsky, P. E. Norris

Research output: Contribution to journal › Conference article › peer-review