Abstract
The electrical as well as the structural properties of La 2 O 3 thin films on TiN substrates were investigated. Amorphous stoichiometric La 2 O 3 thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD) 3 ] and H 2 O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La 2 O 3 film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La 2 O 3 thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10 -10 and 2.1 × 10 -8 A/cm 2 at ±1 V, respectively.
Original language | English |
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Pages (from-to) | 8506-8509 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 252 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2006 Oct 15 |
Keywords
- Atomic layer deposition
- La O
- MIM capacitor
- high-k dielectrics
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films