Electrical properties of La                         2                         O                         3                          thin films grown on TiN/Si substrates via atomic layer deposition

Nam Kyun Park; Dong Kyun Kang; Byong Ho Kim; Sang Jin Jo; Jeong Sook Ha

doi:10.1016/j.apsusc.2005.11.064

Electrical properties of La ₂ O ₃ thin films grown on TiN/Si substrates via atomic layer deposition

Nam Kyun Park, Dong Kyun Kang, Byong Ho Kim, Sang Jin Jo, Jeong Sook Ha

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The electrical as well as the structural properties of La ₂ O ₃ thin films on TiN substrates were investigated. Amorphous stoichiometric La ₂ O ₃ thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD) ₃ ] and H ₂ O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La ₂ O ₃ film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La ₂ O ₃ thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10 ^-10 and 2.1 × 10 ^-8 A/cm ² at ±1 V, respectively.

Original language	English
Pages (from-to)	8506-8509
Number of pages	4
Journal	Applied Surface Science
Volume	252
Issue number	24
DOIs	https://doi.org/10.1016/j.apsusc.2005.11.064
Publication status	Published - 2006 Oct 15

Keywords

Atomic layer deposition
La O
MIM capacitor
high-k dielectrics

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2005.11.064

Cite this

Park, N. K., Kang, D. K., Kim, B. H., Jo, S. J., & Ha, J. S. (2006). Electrical properties of La ₂ O ₃ thin films grown on TiN/Si substrates via atomic layer deposition Applied Surface Science, 252(24), 8506-8509. https://doi.org/10.1016/j.apsusc.2005.11.064

Electrical properties of La ₂ O ₃ thin films grown on TiN/Si substrates via atomic layer deposition . / Park, Nam Kyun; Kang, Dong Kyun; Kim, Byong Ho et al.

In: Applied Surface Science, Vol. 252, No. 24, 15.10.2006, p. 8506-8509.

Research output: Contribution to journal › Article › peer-review

Park, NK, Kang, DK, Kim, BH, Jo, SJ & Ha, JS 2006, ' Electrical properties of La ₂ O ₃ thin films grown on TiN/Si substrates via atomic layer deposition ', Applied Surface Science, vol. 252, no. 24, pp. 8506-8509. https://doi.org/10.1016/j.apsusc.2005.11.064

Park NK, Kang DK, Kim BH, Jo SJ, Ha JS. Electrical properties of La ₂ O ₃ thin films grown on TiN/Si substrates via atomic layer deposition Applied Surface Science. 2006 Oct 15;252(24):8506-8509. doi: 10.1016/j.apsusc.2005.11.064

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title = " Electrical properties of La 2 O 3 thin films grown on TiN/Si substrates via atomic layer deposition ",

abstract = " The electrical as well as the structural properties of La 2 O 3 thin films on TiN substrates were investigated. Amorphous stoichiometric La 2 O 3 thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD) 3 ] and H 2 O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La 2 O 3 film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La 2 O 3 thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10 -10 and 2.1 × 10 -8 A/cm 2 at ±1 V, respectively.",

keywords = "Atomic layer deposition, La O, MIM capacitor, high-k dielectrics",

author = "Park, {Nam Kyun} and Kang, {Dong Kyun} and Kim, {Byong Ho} and Jo, {Sang Jin} and Ha, {Jeong Sook}",

note = "Funding Information: This work was financially supported by industry-university cooperation project between Hynix semiconductor and Korea University.",

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AU - Ha, Jeong Sook

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N2 - The electrical as well as the structural properties of La 2 O 3 thin films on TiN substrates were investigated. Amorphous stoichiometric La 2 O 3 thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD) 3 ] and H 2 O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La 2 O 3 film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La 2 O 3 thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10 -10 and 2.1 × 10 -8 A/cm 2 at ±1 V, respectively.

AB - The electrical as well as the structural properties of La 2 O 3 thin films on TiN substrates were investigated. Amorphous stoichiometric La 2 O 3 thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD) 3 ] and H 2 O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La 2 O 3 film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La 2 O 3 thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10 -10 and 2.1 × 10 -8 A/cm 2 at ±1 V, respectively.

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