Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

Min S. Oh, Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N2 ambient produce higher sheet carrier concentrations and lower sheet resistances as compared with those of the as-grown samples. Consequently, the contacts to the laser-irradiated samples yield significantly low specific contact resistance as compared to the as-grown sample. Experimental and calculation results show that field emission is responsible for the current flow for the N2-irradiated sample. It is, however, shown that for the as-grown sample, the current flow is due to thermionic emission.

Original languageEnglish
Pages (from-to)831-834
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume17
Issue number10
DOIs
Publication statusPublished - 2006 Oct 1

Fingerprint

Ohmic contacts
electric contacts
Electric properties
electrical properties
Thermionic emission
Lasers
Sheet resistance
Excimer lasers
Laser beam effects
Contact resistance
Field emission
lasers
Carrier concentration
thermionic emission
contact resistance
excimer lasers
field emission
irradiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN. / Oh, Min S.; Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: Journal of Materials Science: Materials in Electronics, Vol. 17, No. 10, 01.10.2006, p. 831-834.

Research output: Contribution to journalArticle

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