Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

Min S. Oh, Ja Soon Jang, Seong J. Park, Tae Yeon Seong

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Abstract

We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N2 ambient produce higher sheet carrier concentrations and lower sheet resistances as compared with those of the as-grown samples. Consequently, the contacts to the laser-irradiated samples yield significantly low specific contact resistance as compared to the as-grown sample. Experimental and calculation results show that field emission is responsible for the current flow for the N2-irradiated sample. It is, however, shown that for the as-grown sample, the current flow is due to thermionic emission.

Original languageEnglish
Pages (from-to)831-834
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume17
Issue number10
DOIs
Publication statusPublished - 2006 Oct 1

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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