Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

Hyun Wook Jung, Woo Shik Jung, Hyun-Yong Yu, Jin Hong Park

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 17 in SPC and ̃1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm2/V s and ̃30 cm2/V s at 500 °C and 400 °C.

Original languageEnglish
Pages (from-to)231-233
Number of pages3
JournalJournal of Alloys and Compounds
Volume561
DOIs
Publication statusPublished - 2013 Jun 5

Fingerprint

Germanium
Crystallization
Phosphorus
Carrier concentration
Electric properties
Metals
Carrier mobility
Atoms
Hall effect
Vacancies
Doping (additives)
Defects
Electrons

Keywords

  • Metal induced crystallization
  • Polycrystalline germanium
  • Solid phase crystallization

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys

Cite this

Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization. / Jung, Hyun Wook; Jung, Woo Shik; Yu, Hyun-Yong; Park, Jin Hong.

In: Journal of Alloys and Compounds, Vol. 561, 05.06.2013, p. 231-233.

Research output: Contribution to journalArticle

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N2 - Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 17 in SPC and ̃1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm2/V s and ̃30 cm2/V s at 500 °C and 400 °C.

AB - Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 17 in SPC and ̃1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm2/V s and ̃30 cm2/V s at 500 °C and 400 °C.

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