Abstract
CdTe0.9Se0.1:Cl crystals doped with chlorine at 5×1017 cm-3 level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x=0.110±0.016. The electrical resistivity of CdTeSe:Cl was 4.5×109 Ω cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of ∼10-2 cm2/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a 241Am radioactive source.
| Original language | English |
|---|---|
| Pages (from-to) | 91-95 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 Jan 4 |
Fingerprint
Keywords
- A1. Surface processes
- A2. Bridgman technique
- B3. Semiconducting II-IV materials
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation. / Kim, Kihyun; Hong, JinKi; Kim, SunUng.
In: Journal of Crystal Growth, Vol. 310, No. 1, 04.01.2008, p. 91-95.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation
AU - Kim, Kihyun
AU - Hong, JinKi
AU - Kim, SunUng
PY - 2008/1/4
Y1 - 2008/1/4
N2 - CdTe0.9Se0.1:Cl crystals doped with chlorine at 5×1017 cm-3 level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x=0.110±0.016. The electrical resistivity of CdTeSe:Cl was 4.5×109 Ω cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of ∼10-2 cm2/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a 241Am radioactive source.
AB - CdTe0.9Se0.1:Cl crystals doped with chlorine at 5×1017 cm-3 level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x=0.110±0.016. The electrical resistivity of CdTeSe:Cl was 4.5×109 Ω cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of ∼10-2 cm2/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a 241Am radioactive source.
KW - A1. Surface processes
KW - A2. Bridgman technique
KW - B3. Semiconducting II-IV materials
UR - http://www.scopus.com/inward/record.url?scp=36549012178&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36549012178&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2007.10.009
DO - 10.1016/j.jcrysgro.2007.10.009
M3 - Article
AN - SCOPUS:36549012178
VL - 310
SP - 91
EP - 95
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -