Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation

Ki Hyun Kim; Jin Ki Hong; Sun Ung Kim

doi:10.1016/j.jcrysgro.2007.10.009

Electrical properties of semi-insulating CdTe_0:9Se_0:1:Cl crystal and its surface preparation

Ki Hyun Kim, Jin Ki Hong, Sun Ung Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

CdTe_0.9Se_0.1:Cl crystals doped with chlorine at 5×10¹⁷ cm^-3 level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x=0.110±0.016. The electrical resistivity of CdTeSe:Cl was 4.5×10⁹ Ω cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of ∼10^-2 cm²/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a ²⁴¹Am radioactive source.

Original language	English
Pages (from-to)	91-95
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.10.009
Publication status	Published - 2008 Jan 4

Keywords

A1. Surface processes
A2. Bridgman technique
B3. Semiconducting II-IV materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2007.10.009

Cite this

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title = "Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation",

abstract = "CdTe0.9Se0.1:Cl crystals doped with chlorine at 5×1017 cm-3 level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x=0.110±0.016. The electrical resistivity of CdTeSe:Cl was 4.5×109 Ω cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of ∼10-2 cm2/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a 241Am radioactive source.",

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AU - Hong, Jin Ki

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N2 - CdTe0.9Se0.1:Cl crystals doped with chlorine at 5×1017 cm-3 level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x=0.110±0.016. The electrical resistivity of CdTeSe:Cl was 4.5×109 Ω cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of ∼10-2 cm2/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a 241Am radioactive source.

AB - CdTe0.9Se0.1:Cl crystals doped with chlorine at 5×1017 cm-3 level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x=0.110±0.016. The electrical resistivity of CdTeSe:Cl was 4.5×109 Ω cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of ∼10-2 cm2/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a 241Am radioactive source.

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KW - B3. Semiconducting II-IV materials

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