Electrical properties of sol-gel processed PLZT thin films

J. M. Kim, D. S. Yoon, K. No

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11 Citations (Scopus)

Abstract

Sol-gel processed lanthanum-modified lead zirconate titanate (PLZT) thin films consisting of two different perovskite phase contents were fabricated on indium tin oxide coated Corning 7059 glass substrates with two different heating schedules: direct insertion at 650° C for 30 min and at 500° C for 2h. Optical transmittance spectra, polarization versus electric field curves, relative dielectric constant versus frequency and capacitance versus d.c. bias voltage curves of the samples were investigated. The samples showed a good transparency of over 70% and interference oscillation. A thin film consisting of mainly perovskite phase showed a slim loop hysteresis in the polarization versus electric field curve and in the capacitance versus d.c. bias voltage curve, indicating the presence of ferroelectric domains, but a film consisting of mainly pyrochlore phase did not. The dielectric constant and loss factor of the thin film consisting of mainly perovskite phase were about 90 and about 0.2, respectively, at relatively low frequency and showed dispersion of the dipolar polarization of permanent dipole moment in the ferroelectric perovskite phase in the frequency range between 10 kHz and 1 MHz.

Original languageEnglish
Pages (from-to)6599-6603
Number of pages5
JournalJournal of Materials Science
Volume29
Issue number24
DOIs
Publication statusPublished - 1994 Jan

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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