Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model

C. Y. Yim, D. Y. Jeon, K. H. Kim, Gyu-Tae Kim, Y. S. Woo, S. Roth, J. S. Lee, S. Kim

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A single ZnO nanowire field-effect transistor(FET) was fabricated and its current-voltage characteristics were recorded at the temperatures ranging from T = 107 K to 300 K. Current-voltage characteristics showed typical non-ohmic behaviors with noticeable temperature dependence of the carrier concentration and the mobilities, reflecting the influence of the contact barriers formed between the ZnO nanowire and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET and its analysis methods with PSPICE simulation are suggested in order to model the contact barriers in nanowire devices.

Original languageEnglish
Pages (from-to)1565-1569
Number of pages5
JournalJournal of the Korean Physical Society
Volume48
Issue number6
Publication statusPublished - 2006 Jun 1

Keywords

  • Contact resistance
  • Field effect transistor
  • PSPICE simulation
  • ZnO nanowire

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yim, C. Y., Jeon, D. Y., Kim, K. H., Kim, G-T., Woo, Y. S., Roth, S., Lee, J. S., & Kim, S. (2006). Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model. Journal of the Korean Physical Society, 48(6), 1565-1569.