Electrical properties of thermally annealed β-Ga2O3 metal-semiconductor field-effect transistors with Pt/Au Schottky contacts

Suhyun Kim, Ji Hyun Kim

Research output: Contribution to journalArticle

Abstract

The electrical properties of the metal-semiconductor field-effect transistors (MESFETs) based on quasi-two-dimensional β-Ga2O3 n-channel and Pt/Au Schottky gate electrode were analyzed with cumulative temperature and time of thermal annealing. Mechanical exfoliation was used to prepare the β-Ga2O3 microflakes and the fabricated device was thermally annealed using either a rapid thermal annealing (RTA) equipment or a furnace. Raman spectroscopy was also employed to investigate the robustness of the mechanically exfoliated β-Ga2O3 microflakes. The devices survived a high temperature up to 700°C (RTA) and endured thermal annealing for an extended time of 90 minutes at 500°C. The stable performance was observed from the β-Ga2O3 MESFET until the Schottky barrier height decreased substantially and the current modulation deteriorated significantly after an RTA at 700°C. The obvious change in Schottky diode characteristics and the color contrast over the whole source and drain electrodes also confirmed the failure of MESFET operation after 120 minutes of annealing at 500°C. The thermal stability of the electronic devices based on β-Ga2O3 microflakes motivates further studies including power switching electronics under harsh environments.

Original languageEnglish
Pages (from-to)Q3122-Q3125
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

MESFET devices
Rapid thermal annealing
Electric properties
Annealing
Electrodes
Raman spectroscopy
Diodes
Furnaces
Thermodynamic stability
Electronic equipment
Modulation
Color
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

@article{e12d6794305c465e88af06b74c4fce0f,
title = "Electrical properties of thermally annealed β-Ga2O3 metal-semiconductor field-effect transistors with Pt/Au Schottky contacts",
abstract = "The electrical properties of the metal-semiconductor field-effect transistors (MESFETs) based on quasi-two-dimensional β-Ga2O3 n-channel and Pt/Au Schottky gate electrode were analyzed with cumulative temperature and time of thermal annealing. Mechanical exfoliation was used to prepare the β-Ga2O3 microflakes and the fabricated device was thermally annealed using either a rapid thermal annealing (RTA) equipment or a furnace. Raman spectroscopy was also employed to investigate the robustness of the mechanically exfoliated β-Ga2O3 microflakes. The devices survived a high temperature up to 700°C (RTA) and endured thermal annealing for an extended time of 90 minutes at 500°C. The stable performance was observed from the β-Ga2O3 MESFET until the Schottky barrier height decreased substantially and the current modulation deteriorated significantly after an RTA at 700°C. The obvious change in Schottky diode characteristics and the color contrast over the whole source and drain electrodes also confirmed the failure of MESFET operation after 120 minutes of annealing at 500°C. The thermal stability of the electronic devices based on β-Ga2O3 microflakes motivates further studies including power switching electronics under harsh environments.",
author = "Suhyun Kim and Kim, {Ji Hyun}",
year = "2019",
month = "1",
day = "1",
doi = "10.1149/2.0231907jss",
language = "English",
volume = "8",
pages = "Q3122--Q3125",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "7",

}

TY - JOUR

T1 - Electrical properties of thermally annealed β-Ga2O3 metal-semiconductor field-effect transistors with Pt/Au Schottky contacts

AU - Kim, Suhyun

AU - Kim, Ji Hyun

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The electrical properties of the metal-semiconductor field-effect transistors (MESFETs) based on quasi-two-dimensional β-Ga2O3 n-channel and Pt/Au Schottky gate electrode were analyzed with cumulative temperature and time of thermal annealing. Mechanical exfoliation was used to prepare the β-Ga2O3 microflakes and the fabricated device was thermally annealed using either a rapid thermal annealing (RTA) equipment or a furnace. Raman spectroscopy was also employed to investigate the robustness of the mechanically exfoliated β-Ga2O3 microflakes. The devices survived a high temperature up to 700°C (RTA) and endured thermal annealing for an extended time of 90 minutes at 500°C. The stable performance was observed from the β-Ga2O3 MESFET until the Schottky barrier height decreased substantially and the current modulation deteriorated significantly after an RTA at 700°C. The obvious change in Schottky diode characteristics and the color contrast over the whole source and drain electrodes also confirmed the failure of MESFET operation after 120 minutes of annealing at 500°C. The thermal stability of the electronic devices based on β-Ga2O3 microflakes motivates further studies including power switching electronics under harsh environments.

AB - The electrical properties of the metal-semiconductor field-effect transistors (MESFETs) based on quasi-two-dimensional β-Ga2O3 n-channel and Pt/Au Schottky gate electrode were analyzed with cumulative temperature and time of thermal annealing. Mechanical exfoliation was used to prepare the β-Ga2O3 microflakes and the fabricated device was thermally annealed using either a rapid thermal annealing (RTA) equipment or a furnace. Raman spectroscopy was also employed to investigate the robustness of the mechanically exfoliated β-Ga2O3 microflakes. The devices survived a high temperature up to 700°C (RTA) and endured thermal annealing for an extended time of 90 minutes at 500°C. The stable performance was observed from the β-Ga2O3 MESFET until the Schottky barrier height decreased substantially and the current modulation deteriorated significantly after an RTA at 700°C. The obvious change in Schottky diode characteristics and the color contrast over the whole source and drain electrodes also confirmed the failure of MESFET operation after 120 minutes of annealing at 500°C. The thermal stability of the electronic devices based on β-Ga2O3 microflakes motivates further studies including power switching electronics under harsh environments.

UR - http://www.scopus.com/inward/record.url?scp=85072084825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072084825&partnerID=8YFLogxK

U2 - 10.1149/2.0231907jss

DO - 10.1149/2.0231907jss

M3 - Article

VL - 8

SP - Q3122-Q3125

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 7

ER -