Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN

V. Rajagopal Reddy, Sang Ho Kim, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Thermally stable ohmic contact to moderately doped p-GaN:Mg (1.13×1017 cm-3) have been investigated using Pt (20 nm)/Re (30 nm)/Au (80 nm) metallization scheme. It is shown that annealing the samples at 600 °C for 1 min in a N2 ambient improves the I-V characteristics of the as-deposited contact. The 600 °C contact produces a specific contact resistance of 1.4×10-3 Ωcm2. However, annealing at 800 °C results in the degradation of the I-V characteristics. It is further shown that the surface morphology of the contact annealed at 600 °C is very smooth with a root-mean-square roughness of 1.4 nm and that the contact resistivity of the sample annealed at 600 °C for 30 min is comparable to that of the 1 min annealed sample. Glancing angle X-ray diffraction and Auger electron microscopy are used to characterise the interfacial reactions between the Pt/Re/Au layers and the p-GaN and hence to understand the annealing dependence of ohmic behaviour.

Original languageEnglish
Pages (from-to)1563-1568
Number of pages6
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2004 Sep
Externally publishedYes


  • Electrical properties
  • Glancing angle X-ray diffraction
  • Ohmic contacts
  • P-GaN
  • Spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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