Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN

V. Rajagopal Reddy, Sang Ho Kim, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Thermally stable ohmic contact to moderately doped p-GaN:Mg (1.13×1017 cm-3) have been investigated using Pt (20 nm)/Re (30 nm)/Au (80 nm) metallization scheme. It is shown that annealing the samples at 600 °C for 1 min in a N2 ambient improves the I-V characteristics of the as-deposited contact. The 600 °C contact produces a specific contact resistance of 1.4×10-3 Ωcm2. However, annealing at 800 °C results in the degradation of the I-V characteristics. It is further shown that the surface morphology of the contact annealed at 600 °C is very smooth with a root-mean-square roughness of 1.4 nm and that the contact resistivity of the sample annealed at 600 °C for 30 min is comparable to that of the 1 min annealed sample. Glancing angle X-ray diffraction and Auger electron microscopy are used to characterise the interfacial reactions between the Pt/Re/Au layers and the p-GaN and hence to understand the annealing dependence of ohmic behaviour.

Original languageEnglish
Pages (from-to)1563-1568
Number of pages6
JournalSolid-State Electronics
Volume48
Issue number9
DOIs
Publication statusPublished - 2004 Sep 1
Externally publishedYes

Fingerprint

Ohmic contacts
electric contacts
Electric properties
electrical properties
Annealing
annealing
Contact resistance
Metallizing
Surface chemistry
contact resistance
Electron microscopy
Surface morphology
electron microscopy
roughness
Surface roughness
degradation
X ray diffraction
Degradation
electrical resistivity
diffraction

Keywords

  • Electrical properties
  • Glancing angle X-ray diffraction
  • Ohmic contacts
  • P-GaN
  • Spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN. / Reddy, V. Rajagopal; Kim, Sang Ho; Song, June O.; Seong, Tae Yeon.

In: Solid-State Electronics, Vol. 48, No. 9, 01.09.2004, p. 1563-1568.

Research output: Contribution to journalArticle

Reddy, V. Rajagopal ; Kim, Sang Ho ; Song, June O. ; Seong, Tae Yeon. / Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN. In: Solid-State Electronics. 2004 ; Vol. 48, No. 9. pp. 1563-1568.
@article{183bc95b75bf4715a3d77e74a2a707a1,
title = "Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN",
abstract = "Thermally stable ohmic contact to moderately doped p-GaN:Mg (1.13×1017 cm-3) have been investigated using Pt (20 nm)/Re (30 nm)/Au (80 nm) metallization scheme. It is shown that annealing the samples at 600 °C for 1 min in a N2 ambient improves the I-V characteristics of the as-deposited contact. The 600 °C contact produces a specific contact resistance of 1.4×10-3 Ωcm2. However, annealing at 800 °C results in the degradation of the I-V characteristics. It is further shown that the surface morphology of the contact annealed at 600 °C is very smooth with a root-mean-square roughness of 1.4 nm and that the contact resistivity of the sample annealed at 600 °C for 30 min is comparable to that of the 1 min annealed sample. Glancing angle X-ray diffraction and Auger electron microscopy are used to characterise the interfacial reactions between the Pt/Re/Au layers and the p-GaN and hence to understand the annealing dependence of ohmic behaviour.",
keywords = "Electrical properties, Glancing angle X-ray diffraction, Ohmic contacts, P-GaN, Spectroscopy",
author = "Reddy, {V. Rajagopal} and Kim, {Sang Ho} and Song, {June O.} and Seong, {Tae Yeon}",
year = "2004",
month = "9",
day = "1",
doi = "10.1016/j.sse.2003.12.041",
language = "English",
volume = "48",
pages = "1563--1568",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN

AU - Reddy, V. Rajagopal

AU - Kim, Sang Ho

AU - Song, June O.

AU - Seong, Tae Yeon

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Thermally stable ohmic contact to moderately doped p-GaN:Mg (1.13×1017 cm-3) have been investigated using Pt (20 nm)/Re (30 nm)/Au (80 nm) metallization scheme. It is shown that annealing the samples at 600 °C for 1 min in a N2 ambient improves the I-V characteristics of the as-deposited contact. The 600 °C contact produces a specific contact resistance of 1.4×10-3 Ωcm2. However, annealing at 800 °C results in the degradation of the I-V characteristics. It is further shown that the surface morphology of the contact annealed at 600 °C is very smooth with a root-mean-square roughness of 1.4 nm and that the contact resistivity of the sample annealed at 600 °C for 30 min is comparable to that of the 1 min annealed sample. Glancing angle X-ray diffraction and Auger electron microscopy are used to characterise the interfacial reactions between the Pt/Re/Au layers and the p-GaN and hence to understand the annealing dependence of ohmic behaviour.

AB - Thermally stable ohmic contact to moderately doped p-GaN:Mg (1.13×1017 cm-3) have been investigated using Pt (20 nm)/Re (30 nm)/Au (80 nm) metallization scheme. It is shown that annealing the samples at 600 °C for 1 min in a N2 ambient improves the I-V characteristics of the as-deposited contact. The 600 °C contact produces a specific contact resistance of 1.4×10-3 Ωcm2. However, annealing at 800 °C results in the degradation of the I-V characteristics. It is further shown that the surface morphology of the contact annealed at 600 °C is very smooth with a root-mean-square roughness of 1.4 nm and that the contact resistivity of the sample annealed at 600 °C for 30 min is comparable to that of the 1 min annealed sample. Glancing angle X-ray diffraction and Auger electron microscopy are used to characterise the interfacial reactions between the Pt/Re/Au layers and the p-GaN and hence to understand the annealing dependence of ohmic behaviour.

KW - Electrical properties

KW - Glancing angle X-ray diffraction

KW - Ohmic contacts

KW - P-GaN

KW - Spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=2942640018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942640018&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2003.12.041

DO - 10.1016/j.sse.2003.12.041

M3 - Article

AN - SCOPUS:2942640018

VL - 48

SP - 1563

EP - 1568

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -