Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung; Tae Yeon Seong; Hyunsoo Kim; Kyung Soo Park; Jae Gwan Park; Gon Namgoong

doi:10.1149/1.3126529

Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung, Tae Yeon Seong, Hyunsoo Kim, Kyung Soo Park, Jae Gwan Park, Gon Namgoong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We investigate the electrical properties of Ti/Al ohmic contacts on (NH₄)₂S_x-passivated N-face n-GaN:Si (4.2× 10¹⁸ cm^-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

Original language	English
Pages (from-to)	H275-H277
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/1.3126529
Publication status	Published - 2009

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes. / Jung, Se Yeon; Seong, Tae Yeon; Kim, Hyunsoo; Park, Kyung Soo; Park, Jae Gwan; Namgoong, Gon.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 7, 2009, p. H275-H277.

Research output: Contribution to journal › Article › peer-review

@article{e78956df002c4fd6b8cffd5e5d1dd154,

title = "Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes",

abstract = "We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.",

author = "Jung, {Se Yeon} and Seong, {Tae Yeon} and Hyunsoo Kim and Park, {Kyung Soo} and Park, {Jae Gwan} and Gon Namgoong",

year = "2009",

doi = "10.1149/1.3126529",

language = "English",

volume = "12",

pages = "H275--H277",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

AU - Jung, Se Yeon

AU - Seong, Tae Yeon

AU - Kim, Hyunsoo

AU - Park, Kyung Soo

AU - Park, Jae Gwan

AU - Namgoong, Gon

PY - 2009

Y1 - 2009

N2 - We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

AB - We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

UR - http://www.scopus.com/inward/record.url?scp=69149106985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69149106985&partnerID=8YFLogxK

U2 - 10.1149/1.3126529

DO - 10.1149/1.3126529

M3 - Article

AN - SCOPUS:69149106985

VL - 12

SP - H275-H277

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 7

ER -