Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung, Tae Yeon Seong, Hyunsoo Kim, Kyung Soo Park, Jae Gwan Park, Gon Namgoong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2009 Aug 28

Fingerprint

Ohmic contacts
Sulfur
Light emitting diodes
electric contacts
Electric properties
sulfur
light emitting diodes
electrical properties
Passivation
passivity
Annealing
annealing
Photoelectron spectroscopy
X ray spectroscopy
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
photoelectric emission
degradation
photoluminescence

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes. / Jung, Se Yeon; Seong, Tae Yeon; Kim, Hyunsoo; Park, Kyung Soo; Park, Jae Gwan; Namgoong, Gon.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 7, 28.08.2009.

Research output: Contribution to journalArticle

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