Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung; Tae Yeon Seong; Hyunsoo Kim; Kyung Soo Park; Jae Gwan Park; Gon Namgoong

doi:10.1149/1.3126529

Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung, Tae Yeon Seong, Hyunsoo Kim, Kyung Soo Park, Jae Gwan Park, Gon Namgoong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

We investigate the electrical properties of Ti/Al ohmic contacts on (NH₄)₂S_x-passivated N-face n-GaN:Si (4.2× 10¹⁸ cm^-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

Original language	English
Pages (from-to)	H275-H277
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/1.3126529
Publication status	Published - 2009

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Jung, S. Y., Seong, T. Y., Kim, H., Park, K. S., Park, J. G., & Namgoong, G. (2009). Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes. Electrochemical and Solid-State Letters, 12(7), H275-H277. https://doi.org/10.1149/1.3126529

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abstract = "We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.",

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AU - Namgoong, Gon

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