Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung, Tae Yeon Seong, Hyunsoo Kim, Kyung Soo Park, Jae Gwan Park, Gon Namgoong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2009 Aug 28

    Fingerprint

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this