Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung; Tae Yeon Seong; Hyunsoo Kim; Kyung Soo Park; Jae Gwan Park; Gon Namgoong

doi:10.1149/1.3126529

Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes

Se Yeon Jung, Tae Yeon Seong, Hyunsoo Kim, Kyung Soo Park, Jae Gwan Park, Gon Namgoong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

We investigate the electrical properties of Ti/Al ohmic contacts on (NH₄)₂S_x-passivated N-face n-GaN:Si (4.2× 10¹⁸ cm^-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/1.3126529
Publication status	Published - 2009 Aug 28

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ASJC Scopus subject areas

Electrochemistry
Electrical and Electronic Engineering
Materials Science(all)
Chemical Engineering(all)
Physical and Theoretical Chemistry

Cite this

Jung, S. Y., Seong, T. Y., Kim, H., Park, K. S., Park, J. G., & Namgoong, G. (2009). Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes. Electrochemical and Solid-State Letters, 12(7). https://doi.org/10.1149/1.3126529

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abstract = "We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.",

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AU - Namgoong, Gon

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10.1149/1.3126529