Abstract
We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.
| Original language | English |
|---|---|
| Journal | Electrochemical and Solid-State Letters |
| Volume | 12 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2009 Aug 28 |
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ASJC Scopus subject areas
- Electrochemistry
- Electrical and Electronic Engineering
- Materials Science(all)
- Chemical Engineering(all)
- Physical and Theoretical Chemistry
Cite this
Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes. / Jung, Se Yeon; Seong, Tae Yeon; Kim, Hyunsoo; Park, Kyung Soo; Park, Jae Gwan; Namgoong, Gon.
In: Electrochemical and Solid-State Letters, Vol. 12, No. 7, 28.08.2009.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Electrical properties of Ti/Al ohmic contacts to sulfur-passivated N-Face n-type GaN for vertical-structure light-emitting diodes
AU - Jung, Se Yeon
AU - Seong, Tae Yeon
AU - Kim, Hyunsoo
AU - Park, Kyung Soo
AU - Park, Jae Gwan
AU - Namgoong, Gon
PY - 2009/8/28
Y1 - 2009/8/28
N2 - We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.
AB - We investigate the electrical properties of Ti/Al ohmic contacts on (NH4)2Sx-passivated N-face n-GaN:Si (4.2× 1018 cm-3) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.
UR - http://www.scopus.com/inward/record.url?scp=69149106985&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=69149106985&partnerID=8YFLogxK
U2 - 10.1149/1.3126529
DO - 10.1149/1.3126529
M3 - Article
VL - 12
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 7
ER -