Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

A. Y. Polyakov, Dae Woo Jeon, In-Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, E. B. Yakimov

Research output: Contribution to journalArticle

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Abstract

Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼108 cm-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near Ev + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 1014 cm-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.

Original languageEnglish
Article number083712
JournalJournal of Applied Physics
Volume113
Issue number8
DOIs
Publication statusPublished - 2013 Feb 28
Externally publishedYes

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electrical properties
electron beams
wings
seeds
sapphire
signal measurement
capacitance-voltage characteristics
electrical impedance
metalorganic chemical vapor deposition
polarity
traps
electrical resistivity
room temperature
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polyakov, A. Y., Jeon, D. W., Lee, I-H., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., & Yakimov, E. B. (2013). Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth. Journal of Applied Physics, 113(8), [083712]. https://doi.org/10.1063/1.4793630

Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth. / Polyakov, A. Y.; Jeon, Dae Woo; Lee, In-Hwan; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Yakimov, E. B.

In: Journal of Applied Physics, Vol. 113, No. 8, 083712, 28.02.2013.

Research output: Contribution to journalArticle

Polyakov, AY, Jeon, DW, Lee, I-H, Smirnov, NB, Govorkov, AV, Kozhukhova, EA & Yakimov, EB 2013, 'Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth', Journal of Applied Physics, vol. 113, no. 8, 083712. https://doi.org/10.1063/1.4793630
Polyakov, A. Y. ; Jeon, Dae Woo ; Lee, In-Hwan ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Yakimov, E. B. / Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 8.
@article{684b13b7543943c9b820b45c3e11478f,
title = "Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth",
abstract = "Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼108 cm-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near Ev + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 1014 cm-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.",
author = "Polyakov, {A. Y.} and Jeon, {Dae Woo} and In-Hwan Lee and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Yakimov, {E. B.}",
year = "2013",
month = "2",
day = "28",
doi = "10.1063/1.4793630",
language = "English",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

AU - Polyakov, A. Y.

AU - Jeon, Dae Woo

AU - Lee, In-Hwan

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Yakimov, E. B.

PY - 2013/2/28

Y1 - 2013/2/28

N2 - Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼108 cm-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near Ev + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 1014 cm-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.

AB - Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼108 cm-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near Ev + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 1014 cm-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84874923610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874923610&partnerID=8YFLogxK

U2 - 10.1063/1.4793630

DO - 10.1063/1.4793630

M3 - Article

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 083712

ER -