Electrical properties of V2O5 (vanadium pentoxide) nanowires

Mi Ra Min, Jae Hoon Kim, Eun Kyu Kim, Yong Kwan Kim, Jeong Sook Ha, Kyu Tae Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We fabricated a metal-insulator-semiconductor (MIS) structure with V 2O5 nanowires on p-type Si substrates that have been pretreated with 3-aminopropyltriethoxysilane (3-APS) for better adsorption of the nanowires by using a quenching method. The V2O5 nanowires synthesized by using the gel/sol method showed semiconductor properties. For the MIS structure, 50 nm of poly-methylmethcrylate (PMMA) was spin coated on the V2O5 nanowires; then, a Au gate was deposited. The electrical properties of this structure were characterized by using a capacitance-voltage (C-V) measurements. The typical C-V hysteresis appeared at room temperature in the samples treated using a piranah solution for 30 s and 45 s then, the voltage gaps Were measured to be about 5 V and 7.5 V, respectively. These electrical properties show the feasibility of using V 2O5 nanowires for a memory device.

Original languageEnglish
Pages (from-to)1097-1100
Number of pages4
JournalJournal of the Korean Physical Society
Volume49
Issue number3
Publication statusPublished - 2006 Sep 1

Keywords

  • Metal-insulator-semiconductor
  • Nanowires
  • VO (vanadium pentoxide)

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Min, M. R., Kim, J. H., Kim, E. K., Kim, Y. K., Ha, J. S., & Kim, K. T. (2006). Electrical properties of V2O5 (vanadium pentoxide) nanowires. Journal of the Korean Physical Society, 49(3), 1097-1100.