Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, Woong Ki Hong, Minseok Jo, Gunuk Wang, Woojin Park, Byoung Hun Lee, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

Original languageEnglish
Article number034504
JournalJournal of Applied Physics
Volume107
Issue number3
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electrical properties of ZnO nanowire field effect transistors with varying high- k Al<sub>2</sub>O<sub>3</sub> dielectric thickness'. Together they form a unique fingerprint.

  • Cite this

    Choe, M., Jo, G., Maeng, J., Hong, W. K., Jo, M., Wang, G., Park, W., Lee, B. H., Hwang, H., & Lee, T. (2010). Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness. Journal of Applied Physics, 107(3), [034504]. https://doi.org/10.1063/1.3298910