Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, Woong Ki Hong, Minseok Jo, Gunuk Wang, Woojin Park, Byoung Hun Lee, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

Original languageEnglish
Article number034504
JournalJournal of Applied Physics
Volume107
Issue number3
DOIs
Publication statusPublished - 2010 Feb 24
Externally publishedYes

Fingerprint

nanowires
field effect transistors
electrical properties
electric potential
transconductance
metal oxide semiconductors
threshold voltage
leakage
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness. / Choe, Minhyeok; Jo, Gunho; Maeng, Jongsun; Hong, Woong Ki; Jo, Minseok; Wang, Gunuk; Park, Woojin; Lee, Byoung Hun; Hwang, Hyunsang; Lee, Takhee.

In: Journal of Applied Physics, Vol. 107, No. 3, 034504, 24.02.2010.

Research output: Contribution to journalArticle

Choe, Minhyeok ; Jo, Gunho ; Maeng, Jongsun ; Hong, Woong Ki ; Jo, Minseok ; Wang, Gunuk ; Park, Woojin ; Lee, Byoung Hun ; Hwang, Hyunsang ; Lee, Takhee. / Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness. In: Journal of Applied Physics. 2010 ; Vol. 107, No. 3.
@article{c1a3c2ac724f49d1a87aa06cc8d72002,
title = "Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness",
abstract = "We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.",
author = "Minhyeok Choe and Gunho Jo and Jongsun Maeng and Hong, {Woong Ki} and Minseok Jo and Gunuk Wang and Woojin Park and Lee, {Byoung Hun} and Hyunsang Hwang and Takhee Lee",
year = "2010",
month = "2",
day = "24",
doi = "10.1063/1.3298910",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness

AU - Choe, Minhyeok

AU - Jo, Gunho

AU - Maeng, Jongsun

AU - Hong, Woong Ki

AU - Jo, Minseok

AU - Wang, Gunuk

AU - Park, Woojin

AU - Lee, Byoung Hun

AU - Hwang, Hyunsang

AU - Lee, Takhee

PY - 2010/2/24

Y1 - 2010/2/24

N2 - We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

AB - We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=76949108494&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76949108494&partnerID=8YFLogxK

U2 - 10.1063/1.3298910

DO - 10.1063/1.3298910

M3 - Article

AN - SCOPUS:76949108494

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 034504

ER -