Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O 1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering

Jin Seong Kim, Jae Min Han, Mi Ri Joung, Sang Hyo Kweon, Chong-Yun Kang, Sahn Nahm

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Crystalline (Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films were grown on a Pt/Ti/SiO2/Si substrate at various temperatures by using rf-magnetron sputtering. The ZTCS films had a cubic stabilized zirconia structure. The dielectric constant (k) of the ZTCS film grown at 300 °C was approximately 30.5 with a low tan δ value of 0.007 at 100 kHz. Further, this film exhibited a similar k value of 30.4 and a high quality factor of 225 at 1.0 GHz. Moreover, it showed a high capacitance density of 290 nF/cm2 with a small TCC of -60.7 ppm/°C at 100 kHz. A low leakage current (1.4×10-8 A/cm2 at 1.5 MV/cm) with a high breakdown electric field (1.85 MV/cm) was also observed in this film; the leakage current of this film was explained by Schottky emission. Therefore, it can be concluded that ZTCS films grown at low temperatures (≤300 °C) are good candidates for use as embedded capacitor in printed circuit boards.

Original languageEnglish
Pages (from-to)14957-14964
Number of pages8
JournalCeramics International
Volume40
Issue number9 PART B
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry

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