Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Dae Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Undoped epitaxial films of α-Ga2O3 were grown on basal plane sapphire substrates by halide vapor phase epitaxy (HVPE) in three different modes: standard HVPE, HVPE with constant flow of Ga and pulsed supply of O2 (O2-control growth regime), and with constant flow of O2 and pulsed delivery of Ga (Ga-control growth fashion). The best crystalline quality as judged by x-ray symmetric and asymmetric reflection half-widths and by atomic force microscopy morphology profiling was obtained with the O2-control deposition, and these results appear to be the best so far reported for α-Ga2O3 films. All grown α-Ga2O3 epilayers were high-resistivity n-type, with the Fermi level pinned near Ec − 1 eV deep traps. Photoinduced current transient spectra also showed the existence in standard HVPE samples and samples grown under the O2-control pulsed growth conditions of deep hole traps with levels near Ev + 1.4 eV whose density was suppressed in the Ga-control pulsed HVPE samples. The levels of the dominant deep traps in these α-Ga2O3 samples are close to the position of dominant electron and hole traps in well documented β-Ga2O3 crystals and films.

Original languageEnglish
Article number121110
JournalAPL Materials
Volume6
Issue number12
DOIs
Publication statusPublished - 2018 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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