Electrical properties, structural properties, and deep trap spectra of thin α-Ga 2 O 3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Dae Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In-Hwan Lee

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Engineering & Materials Science

Chemical Compounds