TY - JOUR
T1 - Electrical resistivity and microstructural evolution of electrodeposited Co and Co-W nanowires
AU - Yoo, Eunmin
AU - Moon, Jun Hwan
AU - Jeon, Yoo Sang
AU - Kim, Yanghee
AU - Ahn, Jae Pyoung
AU - Kim, Young Keun
N1 - Funding Information:
This work was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-TA1703-06 .
Publisher Copyright:
© 2020 The Author(s)
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/8
Y1 - 2020/8
N2 - As the design rule of the integrated circuits is decreasing to a 10 nm scale, the total electrical resistance of conventional Cu metallization increases rapidly. New conducting materials such as Co with shorter electron mean free paths, have gained significant attention and may replace Cu. Further, Co[sbnd]W alloys are being considered as alternatives to replace the TaN/Ta barrier layers. However, limited studies have been carried out to elucidate electrical resistivity changes in nanoscale Co and its alloys depending on the size and composition. In this study, we report the variations in electrical resistivity and the microstructural evolution of a series of single Co nanowires (NWs) prepared using template-assisted electrochemical deposition, with diameters ranging from 16 to 130 nm. Besides, we investigate Co[sbnd]W alloy NWs with W content ranging from 0 to 25.1 at.%. The Co NWs, in all diameter ranges, show substantially lower resistivity values compared to that in previous reports, where the value of an NW with a diameter of 16 nm is approximately 40 μΩ∙cm. The grain size also decreases as NW diameter decreases. Alloying W with Co NWs increases electrical resistivity. The 30 nm diameter Co[sbnd]W alloy NW with 25.1 at.% W shows the highest electrical resistivity value at 170 μΩ∙cm. This value decreases as post-deposition annealing temperature increases.
AB - As the design rule of the integrated circuits is decreasing to a 10 nm scale, the total electrical resistance of conventional Cu metallization increases rapidly. New conducting materials such as Co with shorter electron mean free paths, have gained significant attention and may replace Cu. Further, Co[sbnd]W alloys are being considered as alternatives to replace the TaN/Ta barrier layers. However, limited studies have been carried out to elucidate electrical resistivity changes in nanoscale Co and its alloys depending on the size and composition. In this study, we report the variations in electrical resistivity and the microstructural evolution of a series of single Co nanowires (NWs) prepared using template-assisted electrochemical deposition, with diameters ranging from 16 to 130 nm. Besides, we investigate Co[sbnd]W alloy NWs with W content ranging from 0 to 25.1 at.%. The Co NWs, in all diameter ranges, show substantially lower resistivity values compared to that in previous reports, where the value of an NW with a diameter of 16 nm is approximately 40 μΩ∙cm. The grain size also decreases as NW diameter decreases. Alloying W with Co NWs increases electrical resistivity. The 30 nm diameter Co[sbnd]W alloy NW with 25.1 at.% W shows the highest electrical resistivity value at 170 μΩ∙cm. This value decreases as post-deposition annealing temperature increases.
KW - Cobalt (Co)
KW - Cobalt‑tungsten (Co[sbnd]W)
KW - Electrical resistivity
KW - Electrodeposition
KW - Microstructure
KW - Nanowire
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U2 - 10.1016/j.matchar.2020.110451
DO - 10.1016/j.matchar.2020.110451
M3 - Article
AN - SCOPUS:85086513047
VL - 166
JO - Materials Characterization
JF - Materials Characterization
SN - 1044-5803
M1 - 110451
ER -