Electrical spin injection and detection in an InAs quantum well

Hyun Cheol Koo, Hyunjung Yi, Jae Beom Ko, Joonyeon Chang, Suk Hee Han, Donghwa Jung, Seon Gu Huh, Jonghwa Eom

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Abstract

The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.

Original languageEnglish
Article number022101
JournalApplied Physics Letters
Volume90
Issue number2
DOIs
Publication statusPublished - 2007 Jan 22
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Koo, H. C., Yi, H., Ko, J. B., Chang, J., Han, S. H., Jung, D., ... Eom, J. (2007). Electrical spin injection and detection in an InAs quantum well. Applied Physics Letters, 90(2), [022101]. https://doi.org/10.1063/1.2430688