Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

Seong Hoon Shim; Hyung Jun Kim; Hyun Cheol Koo; Yun Hi Lee; Joonyeon Chang

doi:10.1063/1.4930833

Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

Seong Hoon Shim, Hyung Jun Kim, Hyun Cheol Koo, Yun Hi Lee, Joonyeon Chang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3-mV at 10-K and 0.8-mV even at 400-K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77-μm, respectively, at 200-K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

Original language	English
Article number	102407
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930833
Publication status	Published - 2015 Sep 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{00f230d9882e4e289c05a2df0853c714,

title = "Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer",

abstract = "We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3-mV at 10-K and 0.8-mV even at 400-K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77-μm, respectively, at 200-K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.",

author = "Shim, {Seong Hoon} and Kim, {Hyung Jun} and Koo, {Hyun Cheol} and Lee, {Yun Hi} and Joonyeon Chang",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = sep,

day = "7",

doi = "10.1063/1.4930833",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

AU - Shim, Seong Hoon

AU - Kim, Hyung Jun

AU - Koo, Hyun Cheol

AU - Lee, Yun Hi

AU - Chang, Joonyeon

PY - 2015/9/7

Y1 - 2015/9/7

N2 - We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3-mV at 10-K and 0.8-mV even at 400-K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77-μm, respectively, at 200-K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

AB - We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3-mV at 10-K and 0.8-mV even at 400-K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77-μm, respectively, at 200-K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

UR - http://www.scopus.com/inward/record.url?scp=84941334914&partnerID=8YFLogxK

U2 - 10.1063/1.4930833

DO - 10.1063/1.4930833

M3 - Article

AN - SCOPUS:84941334914

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102407

ER -

Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

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