Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

Seong Hoon Shim; Hyung Jun Kim; Hyun Cheol Koo; Yun-Hi Lee; Joonyeon Chang

doi:10.1063/1.4930833

Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

Seong Hoon Shim, Hyung Jun Kim, Hyun Cheol Koo, Yun-Hi Lee, Joonyeon Chang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3-mV at 10-K and 0.8-mV even at 400-K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77-μm, respectively, at 200-K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

Original language	English
Article number	102407
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930833
Publication status	Published - 2015 Sep 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer",

abstract = "We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3-mV at 10-K and 0.8-mV even at 400-K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77-μm, respectively, at 200-K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.",

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AU - Shim, Seong Hoon

AU - Kim, Hyung Jun

AU - Koo, Hyun Cheol

AU - Lee, Yun-Hi

AU - Chang, Joonyeon

PY - 2015/9/7

Y1 - 2015/9/7

N2 - We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3-mV at 10-K and 0.8-mV even at 400-K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77-μm, respectively, at 200-K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

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