Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts

Tae Eon Park, Byoung Chul Min, Hee Gyum Park, Jaejun Lee, Moon Ho Jo, Chaun Jang, Hyun Cheol Koo, Heon Jin Choi, Joonyeon Chang

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Abstract

We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 kΩ and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices.

Original languageEnglish
Article number062402
JournalApplied Physics Letters
Volume111
Issue number6
DOIs
Publication statusPublished - 2017 Aug 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Park, T. E., Min, B. C., Park, H. G., Lee, J., Jo, M. H., Jang, C., Koo, H. C., Choi, H. J., & Chang, J. (2017). Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts. Applied Physics Letters, 111(6), [062402]. https://doi.org/10.1063/1.4998587