Electrical spin transport in n-doped In0.53Ga0.47As channels

Youn Ho Park, Hyun Cheol Koo, Kyung Ho Kim, Hyung Jun Kim, Suk Hee Han

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Spin injection from a ferromagnet into an n-doped In0.53Ga0.47As channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of 2 μV and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

Original languageEnglish
Pages (from-to)23-26
Number of pages4
JournalJournal of Magnetics
Volume14
Issue number1
DOIs
Publication statusPublished - 2009 Oct 15

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Keywords

  • Electrical spin transport
  • InGaAs bulk channel
  • Local spin-valve measurement
  • Non-local measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Park, Y. H., Koo, H. C., Kim, K. H., Kim, H. J., & Han, S. H. (2009). Electrical spin transport in n-doped In0.53Ga0.47As channels. Journal of Magnetics, 14(1), 23-26. https://doi.org/10.4283/JMAG.2009.14.1.023