Abstract
Spin injection from a ferromagnet into an n-doped In0.53Ga0.47As channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of 2 μV and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.
| Original language | English |
|---|---|
| Pages (from-to) | 23-26 |
| Number of pages | 4 |
| Journal | Journal of Magnetics |
| Volume | 14 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 Oct 15 |
Keywords
- Electrical spin transport
- InGaAs bulk channel
- Local spin-valve measurement
- Non-local measurement
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Park, Y. H., Koo, H. C., Kim, K. H., Kim, H. J., & Han, S. H. (2009). Electrical spin transport in n-doped In0.53Ga0.47As channels. Journal of Magnetics, 14(1), 23-26. https://doi.org/10.4283/JMAG.2009.14.1.023