Electrical Stability of p-Channel Feedback Field-Effect Transistors under Bias Stresses

Jaemin Son, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (SS) of 0.12 mV/dec, an on-current of ∼ 10-4 A, and a threshold voltage (VTH) of -0.76 V. There is a negligible change in the on-current and SS when the FBFETs are stressed by a gate-bias voltage corresponding to an electric field of 5.4 MV/cm across the gate oxide. On the other hand, as the duration of the stress increases to 1000 s, the VTH shifts to -0.89 V and -0.67 V for NBS and PBS, respectively. The VTH was recovered to over 83% at a recovery bias voltage of ±5 V. The electrical stabilities of FBFETs under NBS and PBS are discussed in this study.

Original languageEnglish
Article number9523874
Pages (from-to)119402-119405
Number of pages4
JournalIEEE Access
Volume9
DOIs
Publication statusPublished - 2021

Keywords

  • bias stress
  • Field-effect transistor
  • positive feedback loop
  • recovery
  • reliability

ASJC Scopus subject areas

  • Computer Science(all)
  • Materials Science(all)
  • Engineering(all)

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