Electrical, structural, optical properties of the azo transparent conducting oxide layer for application to flat panel display

Im Jun No, Sung Hyun Kim, Dong Wha Park, Paik Kyun Shin

Research output: Contribution to journalArticle

Abstract

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, AL2O3: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X-ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature 100 °C, Ar 50 sccm, O2 5 sccm and working pressure 5 mtorr showed the best properties of an electrical resistivity of 1.763 × 10-4 [ω cm], a carrier concentration of 1.801 ×10 21 [cm-3], and a carrier mobility of 19.66 [cm 2/V-S], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

Original languageEnglish
Pages (from-to)1976-1981
Number of pages6
JournalTransactions of the Korean Institute of Electrical Engineers
Volume58
Issue number10
Publication statusPublished - 2009 Oct

Keywords

  • FPD
  • Sputtering
  • TCO
  • TFT
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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