Electrical, structural, optical properties of the azo transparent conducting oxide layer for application to flat panel display

Im Jun No; Sung Hyun Kim; Dong Wha Park; Paik Kyun Shin

Electrical, structural, optical properties of the azo transparent conducting oxide layer for application to flat panel display

Im Jun No, Sung Hyun Kim, Dong Wha Park, Paik Kyun Shin

* Honorary professors

Research output: Contribution to journal › Article › peer-review

Abstract

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, AL₂O₃: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X-ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature 100 °C, Ar 50 sccm, O₂ 5 sccm and working pressure 5 mtorr showed the best properties of an electrical resistivity of 1.763 × 10^-4 [ω cm], a carrier concentration of 1.801 ×10 ²¹ [cm^-3], and a carrier mobility of 19.66 [cm ²/V-S], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

Original language	English
Pages (from-to)	1976-1981
Number of pages	6
Journal	Transactions of the Korean Institute of Electrical Engineers
Volume	58
Issue number	10
Publication status	Published - 2009 Oct

Keywords

FPD
Sputtering
TCO
TFT
ZnO

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Electrical, structural, optical properties of the azo transparent conducting oxide layer for application to flat panel display",

abstract = "Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, AL2O3: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X-ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature 100 °C, Ar 50 sccm, O2 5 sccm and working pressure 5 mtorr showed the best properties of an electrical resistivity of 1.763 × 10-4 [ω cm], a carrier concentration of 1.801 ×10 21 [cm-3], and a carrier mobility of 19.66 [cm 2/V-S], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.",

keywords = "FPD, Sputtering, TCO, TFT, ZnO",

author = "No, {Im Jun} and Kim, {Sung Hyun} and Park, {Dong Wha} and Shin, {Paik Kyun}",

year = "2009",

month = oct,

language = "English",

volume = "58",

pages = "1976--1981",

journal = "Transactions of the Korean Institute of Electrical Engineers",

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publisher = "Korean Institute of Electrical Engineers",

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T1 - Electrical, structural, optical properties of the azo transparent conducting oxide layer for application to flat panel display

AU - No, Im Jun

AU - Kim, Sung Hyun

AU - Park, Dong Wha

AU - Shin, Paik Kyun

PY - 2009/10

Y1 - 2009/10

N2 - Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, AL2O3: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X-ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature 100 °C, Ar 50 sccm, O2 5 sccm and working pressure 5 mtorr showed the best properties of an electrical resistivity of 1.763 × 10-4 [ω cm], a carrier concentration of 1.801 ×10 21 [cm-3], and a carrier mobility of 19.66 [cm 2/V-S], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

AB - Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, AL2O3: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X-ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature 100 °C, Ar 50 sccm, O2 5 sccm and working pressure 5 mtorr showed the best properties of an electrical resistivity of 1.763 × 10-4 [ω cm], a carrier concentration of 1.801 ×10 21 [cm-3], and a carrier mobility of 19.66 [cm 2/V-S], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

KW - FPD

KW - Sputtering

KW - TCO

KW - TFT

KW - ZnO

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SN - 1975-8359

VL - 58

SP - 1976

EP - 1981

JO - Transactions of the Korean Institute of Electrical Engineers

JF - Transactions of the Korean Institute of Electrical Engineers

IS - 10

ER -

Electrical, structural, optical properties of the azo transparent conducting oxide layer for application to flat panel display

Abstract

Keywords

ASJC Scopus subject areas

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