Electrical transport phenomena of single ZnO nanowire device directly measured using nano manipulator

Sang Won Yoon, Jong Hyun Seo, Tae Yeon Seong, Hoon Kwon, Kon Bae Lee, Jae Pyoung Ahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FTB) was investigated by the direct measurement of the electrical resistance at electrode junctions of cross-sectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages81-88
Number of pages8
Volume1258
Publication statusPublished - 2010 Dec 1
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2010 Apr 52010 Apr 9

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period10/4/510/4/9

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Yoon, S. W., Seo, J. H., Seong, T. Y., Kwon, H., Lee, K. B., & Ahn, J. P. (2010). Electrical transport phenomena of single ZnO nanowire device directly measured using nano manipulator. In Materials Research Society Symposium Proceedings (Vol. 1258, pp. 81-88)