Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

Jae Ryoung Kim, Hye Mi So, Jong Wan Park, Ju Jin Kim, Jinhee Kim, Cheol Jin Lee, Seung Chul Lyu

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We have synthesized high-quality gallium nitride (GaN) nanowires by a chemical-vapor-deposition method and studied the electrical transport properties. The electrical measurements on individual GaN nanowires show a pronounced n-type field effect due to nitrogen vacancies in the whole measured temperature ranges. The n-type gate response and the temperature dependence of the current-voltage characteristics could be understood by the band bending at the interface of the metal electrode and GaN wire. The estimated electron mobility from the gate modulation characteristics is about 2.15cm2/Vs at room temperature, suggesting the diffusive nature of electron transport in the nanowires.

Original languageEnglish
Pages (from-to)3548-3550
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2002 May 13
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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