Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

Jae Ryoung Kim; Hye Mi So; Jong Wan Park; Ju Jin Kim; Jinhee Kim; Cheol Jin Lee; Seung Chul Lyu

doi:10.1063/1.1478158

Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

Jae Ryoung Kim, Hye Mi So, Jong Wan Park, Ju Jin Kim, Jinhee Kim, Cheol Jin Lee, Seung Chul Lyu

Research output: Contribution to journal › Article › peer-review

160 Citations (Scopus)

Abstract

We have synthesized high-quality gallium nitride (GaN) nanowires by a chemical-vapor-deposition method and studied the electrical transport properties. The electrical measurements on individual GaN nanowires show a pronounced n-type field effect due to nitrogen vacancies in the whole measured temperature ranges. The n-type gate response and the temperature dependence of the current-voltage characteristics could be understood by the band bending at the interface of the metal electrode and GaN wire. The estimated electron mobility from the gate modulation characteristics is about 2.15cm²/Vs at room temperature, suggesting the diffusive nature of electron transport in the nanowires.

Original language	English
Pages (from-to)	3548-3550
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	19
DOIs	https://doi.org/10.1063/1.1478158
Publication status	Published - 2002 May 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1478158

Cite this

@article{738a2a3d212843ceb1d47dbd2a087153,

title = "Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition",

abstract = "We have synthesized high-quality gallium nitride (GaN) nanowires by a chemical-vapor-deposition method and studied the electrical transport properties. The electrical measurements on individual GaN nanowires show a pronounced n-type field effect due to nitrogen vacancies in the whole measured temperature ranges. The n-type gate response and the temperature dependence of the current-voltage characteristics could be understood by the band bending at the interface of the metal electrode and GaN wire. The estimated electron mobility from the gate modulation characteristics is about 2.15cm2/Vs at room temperature, suggesting the diffusive nature of electron transport in the nanowires.",

author = "Kim, {Jae Ryoung} and So, {Hye Mi} and Park, {Jong Wan} and Kim, {Ju Jin} and Jinhee Kim and Lee, {Cheol Jin} and Lyu, {Seung Chul}",

year = "2002",

month = may,

day = "13",

doi = "10.1063/1.1478158",

language = "English",

volume = "80",

pages = "3548--3550",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

AU - Kim, Jae Ryoung

AU - So, Hye Mi

AU - Park, Jong Wan

AU - Kim, Ju Jin

AU - Kim, Jinhee

AU - Lee, Cheol Jin

AU - Lyu, Seung Chul

PY - 2002/5/13

Y1 - 2002/5/13

N2 - We have synthesized high-quality gallium nitride (GaN) nanowires by a chemical-vapor-deposition method and studied the electrical transport properties. The electrical measurements on individual GaN nanowires show a pronounced n-type field effect due to nitrogen vacancies in the whole measured temperature ranges. The n-type gate response and the temperature dependence of the current-voltage characteristics could be understood by the band bending at the interface of the metal electrode and GaN wire. The estimated electron mobility from the gate modulation characteristics is about 2.15cm2/Vs at room temperature, suggesting the diffusive nature of electron transport in the nanowires.

AB - We have synthesized high-quality gallium nitride (GaN) nanowires by a chemical-vapor-deposition method and studied the electrical transport properties. The electrical measurements on individual GaN nanowires show a pronounced n-type field effect due to nitrogen vacancies in the whole measured temperature ranges. The n-type gate response and the temperature dependence of the current-voltage characteristics could be understood by the band bending at the interface of the metal electrode and GaN wire. The estimated electron mobility from the gate modulation characteristics is about 2.15cm2/Vs at room temperature, suggesting the diffusive nature of electron transport in the nanowires.

UR - http://www.scopus.com/inward/record.url?scp=79956040790&partnerID=8YFLogxK

U2 - 10.1063/1.1478158

DO - 10.1063/1.1478158

M3 - Article

AN - SCOPUS:79956040790

SN - 0003-6951

VL - 80

SP - 3548

EP - 3550

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this