Abstract
Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2νA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property.
| Original language | English |
|---|---|
| Article number | 245203 |
| Journal | Nanotechnology |
| Volume | 22 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2011 Jun 17 |
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ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)
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Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires. / Kim, Kwangeun; Moon, Taeho; Kim, Jeongyong; Kim, Sangsig.
In: Nanotechnology, Vol. 22, No. 24, 245203, 17.06.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires
AU - Kim, Kwangeun
AU - Moon, Taeho
AU - Kim, Jeongyong
AU - Kim, Sangsig
PY - 2011/6/17
Y1 - 2011/6/17
N2 - Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2νA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property.
AB - Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2νA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property.
UR - http://www.scopus.com/inward/record.url?scp=79955876283&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955876283&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/22/24/245203
DO - 10.1088/0957-4484/22/24/245203
M3 - Article
C2 - 21508495
AN - SCOPUS:79955876283
VL - 22
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 24
M1 - 245203
ER -