Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires

Kwangeun Kim, Taeho Moon, Jeongyong Kim, Sangsig Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2νA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property.

Original languageEnglish
Article number245203
JournalNanotechnology
Volume22
Issue number24
DOIs
Publication statusPublished - 2011 Jun 17

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Nanowires
Light
Equipment and Supplies
Nanostructures
Wet etching
Electroluminescence
Electrophoresis
Heterojunctions
Chemical vapor deposition
Hot Temperature

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires. / Kim, Kwangeun; Moon, Taeho; Kim, Jeongyong; Kim, Sangsig.

In: Nanotechnology, Vol. 22, No. 24, 245203, 17.06.2011.

Research output: Contribution to journalArticle

Kim, Kwangeun ; Moon, Taeho ; Kim, Jeongyong ; Kim, Sangsig. / Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires. In: Nanotechnology. 2011 ; Vol. 22, No. 24.
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