TY - JOUR
T1 - Electrochemically metal-doped reduced graphene oxide films
T2 - Properties and applications
AU - Chae, Myung Sic
AU - Lee, Tae Ho
AU - Son, Kyung Rock
AU - Park, Tae Hoon
AU - Hwang, Kyo Seon
AU - Kim, Tae Geun
N1 - Funding Information:
This work was supported financially by the National Research Foundation of Korea (NRF) (No. 2016R1A3B1908249 ). M.S. Chae and T.H. Lee fabricated the device and conducted measurements. K.R. Son and T.H. Park conducted the AFM measurements. T.H. Lee, M.S. Chae, K.S. Hwang and T.G. Kim wrote the manuscript. All authors have given approval to the final version of the manuscript. The authors would like to thank Editage ( www.editage.co.kr ) for English language editing. Appendix A
Publisher Copyright:
© 2019
PY - 2020/3/1
Y1 - 2020/3/1
N2 - The fine control of doping levels in graphene materials such as reduced graphene oxide (RGO) is important to properly manipulate their ambipolar transport characteristics for various device applications. However, conventional doping methods involve complex chemical reactions, large-scale doping processes, and poor stability. Herein, a simple and controllable electrochemical doping treatment (EDT), performed via the conductive channels created at the RGO surface by the application of an electric field, is introduced to tailor the electrical properties of RGO films. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are performed to detect the presence of Ni atoms in RGO films after the EDT (EDT-RGO). Then, EDT-RGO field-effect transistors (FETs) are fabricated with different doping areas (0 to 100 % fractional area) on the RGO active channel to investigate the effect and selective-area doping capability of the EDT. Owing to p-type doping compensation by the intercalated Ni atoms, the electron mobility of the EDT-RGO FET decreases from 1.40 to 0.12 cm2 V−1 s−1 compared with that of the undoped RGO-FET, leading to the conversion from ambipolar to unipolar p-type transfer characteristics.
AB - The fine control of doping levels in graphene materials such as reduced graphene oxide (RGO) is important to properly manipulate their ambipolar transport characteristics for various device applications. However, conventional doping methods involve complex chemical reactions, large-scale doping processes, and poor stability. Herein, a simple and controllable electrochemical doping treatment (EDT), performed via the conductive channels created at the RGO surface by the application of an electric field, is introduced to tailor the electrical properties of RGO films. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are performed to detect the presence of Ni atoms in RGO films after the EDT (EDT-RGO). Then, EDT-RGO field-effect transistors (FETs) are fabricated with different doping areas (0 to 100 % fractional area) on the RGO active channel to investigate the effect and selective-area doping capability of the EDT. Owing to p-type doping compensation by the intercalated Ni atoms, the electron mobility of the EDT-RGO FET decreases from 1.40 to 0.12 cm2 V−1 s−1 compared with that of the undoped RGO-FET, leading to the conversion from ambipolar to unipolar p-type transfer characteristics.
KW - Electrical breakdown process
KW - Electrochemical doping treatment
KW - Field-effect transistor
KW - Reduced graphene oxide
UR - http://www.scopus.com/inward/record.url?scp=85076828206&partnerID=8YFLogxK
U2 - 10.1016/j.jmst.2019.09.014
DO - 10.1016/j.jmst.2019.09.014
M3 - Article
AN - SCOPUS:85076828206
SN - 1005-0302
VL - 40
SP - 72
EP - 80
JO - Journal of Materials Science and Technology
JF - Journal of Materials Science and Technology
ER -