Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

Hyunik Park, Byung Jae Kim, Ji Hyun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by nonuniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO2 nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO 2/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions.

Original languageEnglish
Pages (from-to)25249-25254
Number of pages6
JournalOptics Express
Volume20
Issue number23
DOIs
Publication statusPublished - 2012 Nov 5

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electroluminescence
nanorods
light emitting diodes
quantum wells
electric fields
positioning
sapphire
wafers
thin films

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields. / Park, Hyunik; Kim, Byung Jae; Kim, Ji Hyun.

In: Optics Express, Vol. 20, No. 23, 05.11.2012, p. 25249-25254.

Research output: Contribution to journalArticle

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abstract = "We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by nonuniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO2 nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO 2/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions.",
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