Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jaehui Ahn, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.

Original languageEnglish
Article number082111
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2010 Aug 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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