Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jaehui Ahn, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.

Original languageEnglish
Article number082111
JournalApplied Physics Letters
Volume97
Issue number8
DOIs
Publication statusPublished - 2010 Aug 23

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electroluminescence
heterojunctions
thin films
junction diodes
p-n junctions
electric contacts
alternating current
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction. / Ahn, Jaehui; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.

In: Applied Physics Letters, Vol. 97, No. 8, 082111, 23.08.2010.

Research output: Contribution to journalArticle

Ahn, Jaehui ; Mastro, Michael A. ; Hite, Jennifer ; Eddy, Charles R. ; Kim, Ji Hyun. / Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction. In: Applied Physics Letters. 2010 ; Vol. 97, No. 8.
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