Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.
|Journal||Applied Physics Letters|
|Publication status||Published - 2010 Aug 23|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)