Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jaehui Ahn; Michael A. Mastro; Jennifer Hite; Charles R. Eddy; Jihyun Kim

doi:10.1063/1.3481415

Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jaehui Ahn, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.

Original language	English
Article number	082111
Journal	Applied Physics Letters
Volume	97
Issue number	8
DOIs	https://doi.org/10.1063/1.3481415
Publication status	Published - 2010 Aug 23

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction",

abstract = "Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.",

author = "Jaehui Ahn and Mastro, {Michael A.} and Jennifer Hite and Eddy, {Charles R.} and Jihyun Kim",

note = "Funding Information: The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea. The research at U.S. Naval Research Laboratory was supported by Office of the Naval Research.",

year = "2010",

month = aug,

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doi = "10.1063/1.3481415",

language = "English",

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T1 - Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

AU - Ahn, Jaehui

AU - Mastro, Michael A.

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Kim, Jihyun

N1 - Funding Information: The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea. The research at U.S. Naval Research Laboratory was supported by Office of the Naval Research.

PY - 2010/8/23

Y1 - 2010/8/23

N2 - Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.

AB - Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.

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U2 - 10.1063/1.3481415

DO - 10.1063/1.3481415

M3 - Article

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082111

ER -

Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Abstract

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