Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating

Kevin Brelsford, Jae Sung Rieh, Ping Chuan Wang, Greg Freeman

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Heterojunction bipolar transistor (HBT) design methodology was hypothesized exploring the temperature of the metal system, relating the limits imposed by the metal system to the device operation conditions. The operating current limit of high speed SiGe bipolar transistors due to electromigration was obtained as a function of bias voltage with device self-heating. This technology was selected to demonstrate the necessity of this hypothesis to high speed communication circuit designs.

Original languageEnglish
Pages78-82
Number of pages5
Publication statusPublished - 2001
Externally publishedYes
Event2001 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, United States
Duration: 2001 Oct 152001 Oct 18

Other

Other2001 IEEE International Integrated Reliability Workshop Final Report
CountryUnited States
CityLake Tahoe, CA
Period01/10/1501/10/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Fingerprint Dive into the research topics of 'Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating'. Together they form a unique fingerprint.

  • Cite this

    Brelsford, K., Rieh, J. S., Wang, P. C., & Freeman, G. (2001). Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating. 78-82. Paper presented at 2001 IEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, United States.